Tungsten Based Electrodes for Stacked Capacitor Ferroelectric Memories

Fabrication of high-density ferroelectric memories requires the growth of the ferroelectric material on the drain contact metal. In standard 0.5 mu m technology, W plugs are applied to connect the drain contacts to the first metallization level. In this work, authors investigated electrode systems t...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2002-11, Vol.41 (Part 1, No. 11B), p.6862-6866
Main Authors: Trupina, L., Baborowski, J., Muralt, P., Meyer, V., Bouvet, D., Fazan, P., Lobet, M.
Format: Article
Language:English
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Summary:Fabrication of high-density ferroelectric memories requires the growth of the ferroelectric material on the drain contact metal. In standard 0.5 mu m technology, W plugs are applied to connect the drain contacts to the first metallization level. In this work, authors investigated electrode systems to be applied between sputter deposited, ferroelectric PbZr0.35Ti0.65O3 (PZT) and W. Besides the obvious barrier function of such an electrode system, the texture of the PZT is of interest as well. The roughness of CVD of W layer before and after etch-back by dry etching resulted in an increased leakage current of the ferroelectric capacitor. The problem could be solved by chemical mechanical polishing of the W film. 8 refs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.41.6862