Temperature Dependence of the Thermal Conductivity and Phonon Scattering Time of a Bulk GaN Crystal

Authors measured photothermal signals of a bulk GaN crystal by the photothermal divergence method at 110 to 370 K. The thermal conductivity and the scattering time of phonons contributing to the thermal conductivity have been evaluated from the photothermal signals. A phonon-defect interaction has b...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2002, Vol.41 (Part 1, No. 8), p.5034-5037
Main Authors: Kamano, Masaru, Haraguchi, Masanobu, Niwaki, Takahiro, Fukui, Masuo, Kuwahara, Minoru, Okamoto, Toshihiro, Mukai, Takashi
Format: Article
Language:English
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Summary:Authors measured photothermal signals of a bulk GaN crystal by the photothermal divergence method at 110 to 370 K. The thermal conductivity and the scattering time of phonons contributing to the thermal conductivity have been evaluated from the photothermal signals. A phonon-defect interaction has been expected to play a crucial role in determining the thermal properties of the sample employed here in the above temperature range. 25 refs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.41.5034