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Narrow-Band Solar-Blind Ultraviolet Detectors Based on AlSnO Films with Tunable Band Gap

Semiconductor materials with sufficiently wide band gaps are urgently desired for use in solar-blind ultraviolet detectors. In this work, the growth of AlSnO films was achieved through the magnetron sputtering technique. AlSnO films with band gaps in the range of 4.40–5.43 eV were obtained by varyin...

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Published in:ACS applied materials & interfaces 2023-03, Vol.15 (9), p.12017-12023
Main Authors: Xu, Cunhua, Lan, LiLi, Wang, Zhao, Lv, Peiwen, Zheng, Wei
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cited_by cdi_FETCH-LOGICAL-a330t-a5e7a622917b1a560558af11c0673ccbd440f8cee043d43254671242571fcda3
cites cdi_FETCH-LOGICAL-a330t-a5e7a622917b1a560558af11c0673ccbd440f8cee043d43254671242571fcda3
container_end_page 12023
container_issue 9
container_start_page 12017
container_title ACS applied materials & interfaces
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creator Xu, Cunhua
Lan, LiLi
Wang, Zhao
Lv, Peiwen
Zheng, Wei
description Semiconductor materials with sufficiently wide band gaps are urgently desired for use in solar-blind ultraviolet detectors. In this work, the growth of AlSnO films was achieved through the magnetron sputtering technique. AlSnO films with band gaps in the range of 4.40–5.43 eV were obtained by varying the growth process, which demonstrates that the band gap of AlSnO is continuously tunable. What is more, based on the films prepared, narrow-band solar-blind ultraviolet detectors were fabricated with good solar-blind ultraviolet spectral selectivity, excellent detectivity, and narrow full widths at half-maximum in the response spectra, showing a great potential to be applied to solar-blind ultraviolet narrow-band detection. Therefore, based on the results above, this study focusing on the fabrication of detectors via band gap engineering can be a significant reference for researchers interested in solar-blind ultraviolet detection.
doi_str_mv 10.1021/acsami.2c20801
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2778979007</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2778979007</sourcerecordid><originalsourceid>FETCH-LOGICAL-a330t-a5e7a622917b1a560558af11c0673ccbd440f8cee043d43254671242571fcda3</originalsourceid><addsrcrecordid>eNp1kLFOwzAURS0EoqWwMiKPCCnFdpw4GdtCC1JFhxaJzXpxHJHKiYudUPH3BFK6Mb07nHukdxG6pmRMCaP3oDxU5ZgpRhJCT9CQppwHCYvY6TFzPkAX3m8JiUNGonM0COOEMB7TIXp7AefsPphCneO1NeCCqSm7_GoaB5-lNbrBD7rRqrHO4yl4nWNb44lZ1ys8L03l8b5s3vGmrSEzGv-KFrC7RGcFGK-vDneENvPHzewpWK4Wz7PJMoAwJE0AkRYQM5ZSkVGIYhJFCRSUKhKLUKks55wUidKa8DDnIYt4LCjjLBK0UDmEI3Tba3fOfrTaN7IqvdLGQK1t6yUTIklFSojo0HGPKme9d7qQO1dW4L4kJfJnTNmPKQ9jdoWbg7vNKp0f8b_1OuCuB7qi3NrW1d2n_9m-AW7afSI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2778979007</pqid></control><display><type>article</type><title>Narrow-Band Solar-Blind Ultraviolet Detectors Based on AlSnO Films with Tunable Band Gap</title><source>American Chemical Society:Jisc Collections:American Chemical Society Read &amp; Publish Agreement 2022-2024 (Reading list)</source><creator>Xu, Cunhua ; Lan, LiLi ; Wang, Zhao ; Lv, Peiwen ; Zheng, Wei</creator><creatorcontrib>Xu, Cunhua ; Lan, LiLi ; Wang, Zhao ; Lv, Peiwen ; Zheng, Wei</creatorcontrib><description>Semiconductor materials with sufficiently wide band gaps are urgently desired for use in solar-blind ultraviolet detectors. In this work, the growth of AlSnO films was achieved through the magnetron sputtering technique. AlSnO films with band gaps in the range of 4.40–5.43 eV were obtained by varying the growth process, which demonstrates that the band gap of AlSnO is continuously tunable. What is more, based on the films prepared, narrow-band solar-blind ultraviolet detectors were fabricated with good solar-blind ultraviolet spectral selectivity, excellent detectivity, and narrow full widths at half-maximum in the response spectra, showing a great potential to be applied to solar-blind ultraviolet narrow-band detection. Therefore, based on the results above, this study focusing on the fabrication of detectors via band gap engineering can be a significant reference for researchers interested in solar-blind ultraviolet detection.</description><identifier>ISSN: 1944-8244</identifier><identifier>EISSN: 1944-8252</identifier><identifier>DOI: 10.1021/acsami.2c20801</identifier><identifier>PMID: 36802461</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><subject>Functional Inorganic Materials and Devices</subject><ispartof>ACS applied materials &amp; interfaces, 2023-03, Vol.15 (9), p.12017-12023</ispartof><rights>2023 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a330t-a5e7a622917b1a560558af11c0673ccbd440f8cee043d43254671242571fcda3</citedby><cites>FETCH-LOGICAL-a330t-a5e7a622917b1a560558af11c0673ccbd440f8cee043d43254671242571fcda3</cites><orcidid>0000-0001-8898-5243 ; 0000-0003-4329-0469</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/36802461$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Xu, Cunhua</creatorcontrib><creatorcontrib>Lan, LiLi</creatorcontrib><creatorcontrib>Wang, Zhao</creatorcontrib><creatorcontrib>Lv, Peiwen</creatorcontrib><creatorcontrib>Zheng, Wei</creatorcontrib><title>Narrow-Band Solar-Blind Ultraviolet Detectors Based on AlSnO Films with Tunable Band Gap</title><title>ACS applied materials &amp; interfaces</title><addtitle>ACS Appl. Mater. Interfaces</addtitle><description>Semiconductor materials with sufficiently wide band gaps are urgently desired for use in solar-blind ultraviolet detectors. In this work, the growth of AlSnO films was achieved through the magnetron sputtering technique. AlSnO films with band gaps in the range of 4.40–5.43 eV were obtained by varying the growth process, which demonstrates that the band gap of AlSnO is continuously tunable. What is more, based on the films prepared, narrow-band solar-blind ultraviolet detectors were fabricated with good solar-blind ultraviolet spectral selectivity, excellent detectivity, and narrow full widths at half-maximum in the response spectra, showing a great potential to be applied to solar-blind ultraviolet narrow-band detection. Therefore, based on the results above, this study focusing on the fabrication of detectors via band gap engineering can be a significant reference for researchers interested in solar-blind ultraviolet detection.</description><subject>Functional Inorganic Materials and Devices</subject><issn>1944-8244</issn><issn>1944-8252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp1kLFOwzAURS0EoqWwMiKPCCnFdpw4GdtCC1JFhxaJzXpxHJHKiYudUPH3BFK6Mb07nHukdxG6pmRMCaP3oDxU5ZgpRhJCT9CQppwHCYvY6TFzPkAX3m8JiUNGonM0COOEMB7TIXp7AefsPphCneO1NeCCqSm7_GoaB5-lNbrBD7rRqrHO4yl4nWNb44lZ1ys8L03l8b5s3vGmrSEzGv-KFrC7RGcFGK-vDneENvPHzewpWK4Wz7PJMoAwJE0AkRYQM5ZSkVGIYhJFCRSUKhKLUKks55wUidKa8DDnIYt4LCjjLBK0UDmEI3Tba3fOfrTaN7IqvdLGQK1t6yUTIklFSojo0HGPKme9d7qQO1dW4L4kJfJnTNmPKQ9jdoWbg7vNKp0f8b_1OuCuB7qi3NrW1d2n_9m-AW7afSI</recordid><startdate>20230308</startdate><enddate>20230308</enddate><creator>Xu, Cunhua</creator><creator>Lan, LiLi</creator><creator>Wang, Zhao</creator><creator>Lv, Peiwen</creator><creator>Zheng, Wei</creator><general>American Chemical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0001-8898-5243</orcidid><orcidid>https://orcid.org/0000-0003-4329-0469</orcidid></search><sort><creationdate>20230308</creationdate><title>Narrow-Band Solar-Blind Ultraviolet Detectors Based on AlSnO Films with Tunable Band Gap</title><author>Xu, Cunhua ; Lan, LiLi ; Wang, Zhao ; Lv, Peiwen ; Zheng, Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a330t-a5e7a622917b1a560558af11c0673ccbd440f8cee043d43254671242571fcda3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Functional Inorganic Materials and Devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xu, Cunhua</creatorcontrib><creatorcontrib>Lan, LiLi</creatorcontrib><creatorcontrib>Wang, Zhao</creatorcontrib><creatorcontrib>Lv, Peiwen</creatorcontrib><creatorcontrib>Zheng, Wei</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>ACS applied materials &amp; interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xu, Cunhua</au><au>Lan, LiLi</au><au>Wang, Zhao</au><au>Lv, Peiwen</au><au>Zheng, Wei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Narrow-Band Solar-Blind Ultraviolet Detectors Based on AlSnO Films with Tunable Band Gap</atitle><jtitle>ACS applied materials &amp; interfaces</jtitle><addtitle>ACS Appl. Mater. Interfaces</addtitle><date>2023-03-08</date><risdate>2023</risdate><volume>15</volume><issue>9</issue><spage>12017</spage><epage>12023</epage><pages>12017-12023</pages><issn>1944-8244</issn><eissn>1944-8252</eissn><abstract>Semiconductor materials with sufficiently wide band gaps are urgently desired for use in solar-blind ultraviolet detectors. In this work, the growth of AlSnO films was achieved through the magnetron sputtering technique. AlSnO films with band gaps in the range of 4.40–5.43 eV were obtained by varying the growth process, which demonstrates that the band gap of AlSnO is continuously tunable. What is more, based on the films prepared, narrow-band solar-blind ultraviolet detectors were fabricated with good solar-blind ultraviolet spectral selectivity, excellent detectivity, and narrow full widths at half-maximum in the response spectra, showing a great potential to be applied to solar-blind ultraviolet narrow-band detection. Therefore, based on the results above, this study focusing on the fabrication of detectors via band gap engineering can be a significant reference for researchers interested in solar-blind ultraviolet detection.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>36802461</pmid><doi>10.1021/acsami.2c20801</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-8898-5243</orcidid><orcidid>https://orcid.org/0000-0003-4329-0469</orcidid></addata></record>
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subjects Functional Inorganic Materials and Devices
title Narrow-Band Solar-Blind Ultraviolet Detectors Based on AlSnO Films with Tunable Band Gap
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T09%3A39%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Narrow-Band%20Solar-Blind%20Ultraviolet%20Detectors%20Based%20on%20AlSnO%20Films%20with%20Tunable%20Band%20Gap&rft.jtitle=ACS%20applied%20materials%20&%20interfaces&rft.au=Xu,%20Cunhua&rft.date=2023-03-08&rft.volume=15&rft.issue=9&rft.spage=12017&rft.epage=12023&rft.pages=12017-12023&rft.issn=1944-8244&rft.eissn=1944-8252&rft_id=info:doi/10.1021/acsami.2c20801&rft_dat=%3Cproquest_cross%3E2778979007%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-a330t-a5e7a622917b1a560558af11c0673ccbd440f8cee043d43254671242571fcda3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2778979007&rft_id=info:pmid/36802461&rfr_iscdi=true