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Narrow-Band Solar-Blind Ultraviolet Detectors Based on AlSnO Films with Tunable Band Gap
Semiconductor materials with sufficiently wide band gaps are urgently desired for use in solar-blind ultraviolet detectors. In this work, the growth of AlSnO films was achieved through the magnetron sputtering technique. AlSnO films with band gaps in the range of 4.40–5.43 eV were obtained by varyin...
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Published in: | ACS applied materials & interfaces 2023-03, Vol.15 (9), p.12017-12023 |
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creator | Xu, Cunhua Lan, LiLi Wang, Zhao Lv, Peiwen Zheng, Wei |
description | Semiconductor materials with sufficiently wide band gaps are urgently desired for use in solar-blind ultraviolet detectors. In this work, the growth of AlSnO films was achieved through the magnetron sputtering technique. AlSnO films with band gaps in the range of 4.40–5.43 eV were obtained by varying the growth process, which demonstrates that the band gap of AlSnO is continuously tunable. What is more, based on the films prepared, narrow-band solar-blind ultraviolet detectors were fabricated with good solar-blind ultraviolet spectral selectivity, excellent detectivity, and narrow full widths at half-maximum in the response spectra, showing a great potential to be applied to solar-blind ultraviolet narrow-band detection. Therefore, based on the results above, this study focusing on the fabrication of detectors via band gap engineering can be a significant reference for researchers interested in solar-blind ultraviolet detection. |
doi_str_mv | 10.1021/acsami.2c20801 |
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source | American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list) |
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title | Narrow-Band Solar-Blind Ultraviolet Detectors Based on AlSnO Films with Tunable Band Gap |
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