Exchange anisotropy in NiFe/FeMn bilayers studied by planar Hall effect

Planar Hall effect (PHE) in NiFe/FeMn films was experimentally measured and simulated using Boltzmann transport equation. PHE was found to be an effective method to characterize the exchange anisotropy in NiFe/FeMn films, from which the unidirectional exchange field and the magnetization reversal pr...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2002-04, Vol.242 (I), p.525-528
Main Authors: Lu, Z.Q., Pan, G., Lai, W.Y., Mapps, D.J., Clegg, W.W.
Format: Article
Language:English
Subjects:
Exchange anisotropy
Planar hall effect
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Summary:Planar Hall effect (PHE) in NiFe/FeMn films was experimentally measured and simulated using Boltzmann transport equation. PHE was found to be an effective method to characterize the exchange anisotropy in NiFe/FeMn films, from which the unidirectional exchange field and the magnetization reversal process of the sample can be determined. The effective uniaxial anisotropy field H Keff, the effective unidirectional anisotropy field H ua and the AF domain wall energy H w were obtained by fitting the experimental results. We found that in the NiFe/FeMn system, the parameters H Keff, H ua and H w had the same values in reversible and irreversible measurements, and the domain wall energy in AF layer was much larger than interfacial unidirectional anisotropy.
ISSN:0304-8853
DOI:10.1016/S0304-8853(01)00970-2