Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AlGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate

Authors studied the microstructure in a (1-101) GaN triangular bar and an AlGaN/GaN heterostructure formed on top of it by TEM. The nitride triangular bar was selectively grown on a 7-degree off-oriented (001) Si substrate by MOVPE. Convergent beam electron diffraction was used to determine lattice...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2002-07, Vol.41 (Part 2, No. 7B), p.L846-L848
Main Authors: Tanaka, Shigeyasu, Honda, Yoshio, Kameshiro, Norifumi, Iwasaki, Ryuta, Sawaki, Nobuhiko, Tanji, Takayoshi
Format: Article
Language:English
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Summary:Authors studied the microstructure in a (1-101) GaN triangular bar and an AlGaN/GaN heterostructure formed on top of it by TEM. The nitride triangular bar was selectively grown on a 7-degree off-oriented (001) Si substrate by MOVPE. Convergent beam electron diffraction was used to determine lattice polarity. Threading dislocations were generated near the interface between the unmasked (111) facet of the Si and the nitride. These dislocations bend toward either the (1-101) facet or the interface between the GaN and masked (-1-11) Si, and thread through to the facet or the interface. Dislocations were observed at the AlGaN/GaN interface. Growth proceeded predominantly in the [0001] direction of the nitride with Ga-terminated polarity. 18 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.41.L846