Atomic layer deposition (ALD): from precursors to thin film structures

The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processe...

Full description

Saved in:
Bibliographic Details
Published in:Thin Solid Films 2002-04, Vol.409 (1), p.138-146
Main Authors: Leskelä, Markku, Ritala, Mikko
Format: Article
Language:English
Subjects:
Atomic layer deposition (ALD)
Atomic layer epitaxy (ALE)
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Theory and models of film growth
Thin films
Vapor phase epitaxy
growth from vapor phase
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processes developed for films used in microelectronics are described as examples. These include deposition of oxide films for dielectrics, and nitride and metal films for metallizations. The use of a plasma source to form radicals is expanding the selection of ALD films to metals. Plasma-enhanced ALD also facilitates the deposition of nitride films at low temperatures.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(02)00117-7