Atomic layer deposition (ALD): from precursors to thin film structures

The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processe...

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Published in:Thin Solid Films 2002-04, Vol.409 (1), p.138-146
Main Authors: Leskelä, Markku, Ritala, Mikko
Format: Article
Language:English
Subjects:
Atomic layer deposition (ALD)
Atomic layer epitaxy (ALE)
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Theory and models of film growth
Thin films
Vapor phase epitaxy
growth from vapor phase
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cited_by cdi_FETCH-LOGICAL-c486t-8f05195163089951b5f1a960f66519ad1d3be077949884e69630f0b7df5a82173
cites cdi_FETCH-LOGICAL-c486t-8f05195163089951b5f1a960f66519ad1d3be077949884e69630f0b7df5a82173
container_end_page 146
container_issue 1
container_start_page 138
container_title Thin Solid Films
container_volume 409
creator Leskelä, Markku
Ritala, Mikko
description The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processes developed for films used in microelectronics are described as examples. These include deposition of oxide films for dielectrics, and nitride and metal films for metallizations. The use of a plasma source to form radicals is expanding the selection of ALD films to metals. Plasma-enhanced ALD also facilitates the deposition of nitride films at low temperatures.
doi_str_mv 10.1016/S0040-6090(02)00117-7
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27794074</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609002001177</els_id><sourcerecordid>27794074</sourcerecordid><originalsourceid>FETCH-LOGICAL-c486t-8f05195163089951b5f1a960f66519ad1d3be077949884e69630f0b7df5a82173</originalsourceid><addsrcrecordid>eNqFkE1LAzEQhoMoWKs_QchFsYfVyX4ku16kVKtCwYN6Dmk2wcjuZk2yQv-92bbo0dPA8LzzMg9C5wSuCRB68wqQQ0KhgitIZwCEsIQdoAkpWZWkLCOHaPKLHKMT7z8hUmmaTdByHmxrJG7ERjlcq956E4zt8NV8dT-7xdrZFvdOycF56zwOFocP02Ftmhb74AYZBqf8KTrSovHqbD-n6H358LZ4SlYvj8-L-SqReUlDUmooSFUQmkFZxbkuNBEVBU1p3Iua1NlaAWNVXpVlrmgVQQ1rVutClClh2RRd7u72zn4NygfeGi9V04hO2cHzdMwCyyNY7EDprPdOad470wq34QT4aI1vrfFRCYeUb63xseBiXyC8FI12opPG_4VzSijkaeTudpyK334b5biXRnVS1SbKCry25p-mHw9wfsM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27794074</pqid></control><display><type>article</type><title>Atomic layer deposition (ALD): from precursors to thin film structures</title><source>Elsevier</source><creator>Leskelä, Markku ; Ritala, Mikko</creator><creatorcontrib>Leskelä, Markku ; Ritala, Mikko</creatorcontrib><description>The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processes developed for films used in microelectronics are described as examples. These include deposition of oxide films for dielectrics, and nitride and metal films for metallizations. The use of a plasma source to form radicals is expanding the selection of ALD films to metals. Plasma-enhanced ALD also facilitates the deposition of nitride films at low temperatures.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(02)00117-7</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Atomic layer deposition (ALD) ; Atomic layer epitaxy (ALE) ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Theory and models of film growth ; Thin films ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Thin Solid Films, 2002-04, Vol.409 (1), p.138-146</ispartof><rights>2002 Elsevier Science B.V.</rights><rights>2003 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c486t-8f05195163089951b5f1a960f66519ad1d3be077949884e69630f0b7df5a82173</citedby><cites>FETCH-LOGICAL-c486t-8f05195163089951b5f1a960f66519ad1d3be077949884e69630f0b7df5a82173</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,313,314,780,784,789,790,792,23930,23931,25140,27922,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=14616042$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Leskelä, Markku</creatorcontrib><creatorcontrib>Ritala, Mikko</creatorcontrib><title>Atomic layer deposition (ALD): from precursors to thin film structures</title><title>Thin Solid Films</title><description>The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processes developed for films used in microelectronics are described as examples. These include deposition of oxide films for dielectrics, and nitride and metal films for metallizations. The use of a plasma source to form radicals is expanding the selection of ALD films to metals. Plasma-enhanced ALD also facilitates the deposition of nitride films at low temperatures.</description><subject>Atomic layer deposition (ALD)</subject><subject>Atomic layer epitaxy (ALE)</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Theory and models of film growth</subject><subject>Thin films</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWKs_QchFsYfVyX4ku16kVKtCwYN6Dmk2wcjuZk2yQv-92bbo0dPA8LzzMg9C5wSuCRB68wqQQ0KhgitIZwCEsIQdoAkpWZWkLCOHaPKLHKMT7z8hUmmaTdByHmxrJG7ERjlcq956E4zt8NV8dT-7xdrZFvdOycF56zwOFocP02Ftmhb74AYZBqf8KTrSovHqbD-n6H358LZ4SlYvj8-L-SqReUlDUmooSFUQmkFZxbkuNBEVBU1p3Iua1NlaAWNVXpVlrmgVQQ1rVutClClh2RRd7u72zn4NygfeGi9V04hO2cHzdMwCyyNY7EDprPdOad470wq34QT4aI1vrfFRCYeUb63xseBiXyC8FI12opPG_4VzSijkaeTudpyK334b5biXRnVS1SbKCry25p-mHw9wfsM</recordid><startdate>20020422</startdate><enddate>20020422</enddate><creator>Leskelä, Markku</creator><creator>Ritala, Mikko</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20020422</creationdate><title>Atomic layer deposition (ALD): from precursors to thin film structures</title><author>Leskelä, Markku ; Ritala, Mikko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c486t-8f05195163089951b5f1a960f66519ad1d3be077949884e69630f0b7df5a82173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Atomic layer deposition (ALD)</topic><topic>Atomic layer epitaxy (ALE)</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Theory and models of film growth</topic><topic>Thin films</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Leskelä, Markku</creatorcontrib><creatorcontrib>Ritala, Mikko</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin Solid Films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Leskelä, Markku</au><au>Ritala, Mikko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atomic layer deposition (ALD): from precursors to thin film structures</atitle><jtitle>Thin Solid Films</jtitle><date>2002-04-22</date><risdate>2002</risdate><volume>409</volume><issue>1</issue><spage>138</spage><epage>146</epage><pages>138-146</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processes developed for films used in microelectronics are described as examples. These include deposition of oxide films for dielectrics, and nitride and metal films for metallizations. The use of a plasma source to form radicals is expanding the selection of ALD films to metals. Plasma-enhanced ALD also facilitates the deposition of nitride films at low temperatures.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(02)00117-7</doi><tpages>9</tpages></addata></record>
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1879-2731
language eng
recordid cdi_proquest_miscellaneous_27794074
source Elsevier
subjects Atomic layer deposition (ALD)
Atomic layer epitaxy (ALE)
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Theory and models of film growth
Thin films
Vapor phase epitaxy
growth from vapor phase
title Atomic layer deposition (ALD): from precursors to thin film structures
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T11%3A13%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Atomic%20layer%20deposition%20(ALD):%20from%20precursors%20to%20thin%20film%20structures&rft.jtitle=Thin%20Solid%20Films&rft.au=Leskel%C3%A4,%20Markku&rft.date=2002-04-22&rft.volume=409&rft.issue=1&rft.spage=138&rft.epage=146&rft.pages=138-146&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/S0040-6090(02)00117-7&rft_dat=%3Cproquest_cross%3E27794074%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c486t-8f05195163089951b5f1a960f66519ad1d3be077949884e69630f0b7df5a82173%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27794074&rft_id=info:pmid/&rfr_iscdi=true