Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures

Results on Be diffusion during post-growth rapid thermal annealing at 750°C and 850°C in InGaAs, InGaAsP homostructures and InGaAs/InGaAsP heterostructures, grown by gas source molecular beam epitaxy, are reported. Profiles calculated with the kick-out model can be fitted to experimental secondary i...

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Bibliographic Details
Published in:Journal of crystal growth 2003-05, Vol.252 (1), p.14-18
Main Authors: Koumetz, S., Dubois, C.
Format: Article
Language:English
Subjects:
A1. Diffusion
A3. Gas source molecular beam epitaxy
B1. Be
B1. InGaAs
B1. InGaAsP
Condensed matter: structure, mechanical and thermal properties
Defects and impurities: doping, implantation, distribution, concentration, etc
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Results on Be diffusion during post-growth rapid thermal annealing at 750°C and 850°C in InGaAs, InGaAsP homostructures and InGaAs/InGaAsP heterostructures, grown by gas source molecular beam epitaxy, are reported. Profiles calculated with the kick-out model can be fitted to experimental secondary ion mass spectrometry profiles assuming Be to diffuse as neutral interstitial species.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(02)02483-1