Characteristics of misfit dislocations in the GaInP/GaAs heterostructures grown by metalorganic chemical vapor deposition

• Published in: Journal of crystal growth 2003-06, Vol.253 (1), p.46-51
• Main Authors: Gong, Jyh-Rong, Hou, Shih-Jye, Tseng, Su-Fen
• Format: Article
• Language: English
• Subjects: A1. Characterization; A1. Line defects; A3. Metalorganic chemical vapor deposition; B2. Semiconducting gallium compounds; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(03)00999-0

Investigations of misfit dislocations in the mismatched GaInP/GaAs heterostructures were conducted by transmission electron microscopy (TEM). Ga-rich and In-rich mismatched GaInP films having various compositions in the group III sublattice were prepared on (0 0 1) GaAs substrates by metalorganic chemical vapor deposition. Plan-view TEM studies show that most of the misfit dislocations preferentially lie along 〈1 1 0〉 directions in the GaInP/GaAs heterointerface. In addition to the 60° mixed-type dislocations having Burgers vectors lying on (1 1 ̄ 1) or ( 1 1 1) planes, sessile-type dislocations with Burgers vector lying on (0 0 1) plane were also identified. TEM analyses show that pure edge dislocations are formed through the interactions of those 60° mixed-type dislocations in both Ga-rich and In-rich mismatched GaInP/GaAs heterostructures.