Correction: Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer

Correction for ‘Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer’ by Se Hyun Kim et al., Chem. Commun., 2021, 57, 12452–12455, https://doi.org/10.1039/D1CC04966F.

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Bibliographic Details
Published in:Chemical communications (Cambridge, England) England), 2023-02, Vol.59 (18), p.2668-2668
Main Authors: Kim, Se Hyun, Geun Taek Yu, Park, Geun Hyeong, Lee, Dong Hyun, Ju Yong Park, Yang, Kun, Lee, Eun Been, Je In Lee, Park, Min Hyuk
Format: Article
Language:English
Online Access:Get full text
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Summary:Correction for ‘Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer’ by Se Hyun Kim et al., Chem. Commun., 2021, 57, 12452–12455, https://doi.org/10.1039/D1CC04966F.
ISSN:1359-7345
1364-548X
DOI:10.1039/d3cc90042h