Characterization of carrier generation and transport mechanisms in single-crystal and thin-film HgI2

• Published in: Thin solid films 2003-03, Vol.427 (1-2), p.381-385
• Main Authors: KHADILKAR, U, MAMAZZA, R, FEREKIDES, C. S, MOREL, D. L, DEVITO, R, SANDOVAL, J, VAN DEN BERG, L
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in condensed matter; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Photoconduction and photovoltaic effects; Photoconduction and photovoltaic effects; photodielectric effects; Physics
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(02)01148-3

High-electronic-quality thin films of mercuric iodide have been deposited on SnO2 and other transparent contacts. The crystallites exhibit some preference for c-axis orientation and have lengths comparable to the overall film thickness of 200-400 *mm. With visible photons of 584 nm, quantum efficiencies up to 0.5 are observed at an applied voltage of 50 V. amps, a first-principles simulation code, is used to model device performance. Characterization is complicated by complex electric field profiles. Using representative values for fundamental parameters, current-voltage and quantum efficiency spectral response plots are generated that are in agreement with experimental results from single-crystal reference devices. Comparisons with thin-film devices suggest that relatively small reductions in the values of carrier transport parameters result from the thin-film growth process.