Competition between thermal donors and thermal acceptors in electron-irradiated silicon annealed at 400-700DGC

The formation of electrically active shallow centers in electron-irradiated silicon annealed in the range 400-700DGC was investigated. Radiation-enhanced formation of thermal donors (TDs) was observed at T #~ 400DGC. Non-uniform generation of TDs and thermal acceptors was found for an annealing temp...

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Bibliographic Details
Published in:Microelectronic engineering 2003-04, Vol.66 (1-4), p.385-391
Main Authors: Antonova, I V, Gulyev, M B, Safronov, L N, Smagulova, S A
Format: Article
Language:English
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Summary:The formation of electrically active shallow centers in electron-irradiated silicon annealed in the range 400-700DGC was investigated. Radiation-enhanced formation of thermal donors (TDs) was observed at T #~ 400DGC. Non-uniform generation of TDs and thermal acceptors was found for an annealing temperature of 450DGC. The formation of areas with p- and n-type conductivity correlates with the non-uniform distribution of oxygen in silicon. The temperature interval of thermal acceptor generation in electron-irradiated, Cz-grown silicon was found to be very narrow around 450DGC.
ISSN:0167-9317