Electron-Determined Nonuniform Carrier Distribution among InGaAsP Multiple Quantum Wells

Experiments on laser diodes and superluminescent diodes with nonidentical InGaAsP multiple quantum wells (MQWs) show that quantum wells near the n-cladding layer could accumulate more carriers than those near the p-cladding layer, indicating that nonuniform carrier distribution is determined by elec...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 9A), p.5557-5558
Main Authors: Lin, Ching-Fuh, Wu, Bing-Ruey, Laih, Lih-Wen
Format: Article
Language:English
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Summary:Experiments on laser diodes and superluminescent diodes with nonidentical InGaAsP multiple quantum wells (MQWs) show that quantum wells near the n-cladding layer could accumulate more carriers than those near the p-cladding layer, indicating that nonuniform carrier distribution is determined by electrons instead of holes. The electron-determined behavior is attributed to the thick separate-confinement heterostructure layer. This contrary observation to hole-determined nonuniform carrier distribution implies that carrier distribution among the MQWs could be engineered for desired purposes. 12 refs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.42.5557