CRYSTALLINITY DEPENDENCE OF MICROWAVE DIELECTRIC PROPERTIES IN (Ba,Sr)TiO3 THIN FILMS

The dielectric properties of (Ba0.43Sr0.57)TiO3 (BST) thin films were investigated in the microwave-frequency range. The dielectric losses (tan d) and dielectric constants (e) were measured up to approximately 6 GHz using a circular-patch capacitor geometry. The deposition temperatures were varied f...

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Published in:Japanese Journal of Applied Physics, Part 1 Part 1, 2003, Vol.42 (3), p.1315-1319
Main Authors: Kim, T-G, Oh, J, Kim, Y, Moon, T, Hong, K S, Park, B
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container_title Japanese Journal of Applied Physics, Part 1
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Oh, J
Kim, Y
Moon, T
Hong, K S
Park, B
description The dielectric properties of (Ba0.43Sr0.57)TiO3 (BST) thin films were investigated in the microwave-frequency range. The dielectric losses (tan d) and dielectric constants (e) were measured up to approximately 6 GHz using a circular-patch capacitor geometry. The deposition temperatures were varied from RT to 750 C to investigate the effects of crystallinity on the dielectric properties. As the film crystallinity was enhanced, the dielectric losses increased from 0.0024 plus/minus 0.0018 at RT to 0.0102 plus/minus 0.0017 at 750 C deposition. The dielectric constants varied from 10.29 plus/minus 0.02 to 243 plus/minus 1 in the same deposition-temperature range. Raman spectroscopy showed that the increase in dielectric losses of the BST thin films was correlated with the growth of microscopic polar regions induced by symmetry-breaking defects. Because the sizes of these regions are proportional to the dielectric constants of host lattices (crystallinity), dielectric losses increase with the deposition temperatures. 27 refs.
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_27825115</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27825115</sourcerecordid><originalsourceid>FETCH-LOGICAL-j266t-24d5f44dba66ec308d08860a9ce3fca1e148d85466bde35964e1509dbb9892f73</originalsourceid><addsrcrecordid>eNotjE1PgzAAQHvQxDm9-QN6MpoI9nvliKW4JgwIdJqdlgIlGUE3x_b_XaKnl_cOD4AHjEKMGX0dBncIGQkxxfwKzBAiOGARITfgdpqGiwrO8AysVbWpbZxlJjd2AxNd6jzRudKwSOHKqKr4jD80TIzOtLKVUbCsilJX1ugamhw-vbmX-vhsdwWFdnkJqclW9R247t04-ft_zsE61VYtg6x4NyrOgoEIcQoI63jPWNc4IXxLkeyQlAK5qPW0bx32mMlOciZE03nKI8E85ijqmiaSEekXdA4e_76H4_7n7KfT9ms3tX4c3bffn6ctWUjCMeb0FynASlE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27825115</pqid></control><display><type>article</type><title>CRYSTALLINITY DEPENDENCE OF MICROWAVE DIELECTRIC PROPERTIES IN (Ba,Sr)TiO3 THIN FILMS</title><source>Institute of Physics IOP Science Extra</source><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Kim, T-G ; Oh, J ; Kim, Y ; Moon, T ; Hong, K S ; Park, B</creator><creatorcontrib>Kim, T-G ; Oh, J ; Kim, Y ; Moon, T ; Hong, K S ; Park, B</creatorcontrib><description>The dielectric properties of (Ba0.43Sr0.57)TiO3 (BST) thin films were investigated in the microwave-frequency range. The dielectric losses (tan d) and dielectric constants (e) were measured up to approximately 6 GHz using a circular-patch capacitor geometry. The deposition temperatures were varied from RT to 750 C to investigate the effects of crystallinity on the dielectric properties. As the film crystallinity was enhanced, the dielectric losses increased from 0.0024 plus/minus 0.0018 at RT to 0.0102 plus/minus 0.0017 at 750 C deposition. The dielectric constants varied from 10.29 plus/minus 0.02 to 243 plus/minus 1 in the same deposition-temperature range. Raman spectroscopy showed that the increase in dielectric losses of the BST thin films was correlated with the growth of microscopic polar regions induced by symmetry-breaking defects. Because the sizes of these regions are proportional to the dielectric constants of host lattices (crystallinity), dielectric losses increase with the deposition temperatures. 27 refs.</description><identifier>ISSN: 0021-4922</identifier><identifier>DOI: 10.1143/jjap.42.1315</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, Part 1, 2003, Vol.42 (3), p.1315-1319</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,4012,27906,27907,27908</link.rule.ids></links><search><creatorcontrib>Kim, T-G</creatorcontrib><creatorcontrib>Oh, J</creatorcontrib><creatorcontrib>Kim, Y</creatorcontrib><creatorcontrib>Moon, T</creatorcontrib><creatorcontrib>Hong, K S</creatorcontrib><creatorcontrib>Park, B</creatorcontrib><title>CRYSTALLINITY DEPENDENCE OF MICROWAVE DIELECTRIC PROPERTIES IN (Ba,Sr)TiO3 THIN FILMS</title><title>Japanese Journal of Applied Physics, Part 1</title><description>The dielectric properties of (Ba0.43Sr0.57)TiO3 (BST) thin films were investigated in the microwave-frequency range. The dielectric losses (tan d) and dielectric constants (e) were measured up to approximately 6 GHz using a circular-patch capacitor geometry. The deposition temperatures were varied from RT to 750 C to investigate the effects of crystallinity on the dielectric properties. As the film crystallinity was enhanced, the dielectric losses increased from 0.0024 plus/minus 0.0018 at RT to 0.0102 plus/minus 0.0017 at 750 C deposition. The dielectric constants varied from 10.29 plus/minus 0.02 to 243 plus/minus 1 in the same deposition-temperature range. Raman spectroscopy showed that the increase in dielectric losses of the BST thin films was correlated with the growth of microscopic polar regions induced by symmetry-breaking defects. Because the sizes of these regions are proportional to the dielectric constants of host lattices (crystallinity), dielectric losses increase with the deposition temperatures. 27 refs.</description><issn>0021-4922</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotjE1PgzAAQHvQxDm9-QN6MpoI9nvliKW4JgwIdJqdlgIlGUE3x_b_XaKnl_cOD4AHjEKMGX0dBncIGQkxxfwKzBAiOGARITfgdpqGiwrO8AysVbWpbZxlJjd2AxNd6jzRudKwSOHKqKr4jD80TIzOtLKVUbCsilJX1ugamhw-vbmX-vhsdwWFdnkJqclW9R247t04-ft_zsE61VYtg6x4NyrOgoEIcQoI63jPWNc4IXxLkeyQlAK5qPW0bx32mMlOciZE03nKI8E85ijqmiaSEekXdA4e_76H4_7n7KfT9ms3tX4c3bffn6ctWUjCMeb0FynASlE</recordid><startdate>2003</startdate><enddate>2003</enddate><creator>Kim, T-G</creator><creator>Oh, J</creator><creator>Kim, Y</creator><creator>Moon, T</creator><creator>Hong, K S</creator><creator>Park, B</creator><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>2003</creationdate><title>CRYSTALLINITY DEPENDENCE OF MICROWAVE DIELECTRIC PROPERTIES IN (Ba,Sr)TiO3 THIN FILMS</title><author>Kim, T-G ; Oh, J ; Kim, Y ; Moon, T ; Hong, K S ; Park, B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-j266t-24d5f44dba66ec308d08860a9ce3fca1e148d85466bde35964e1509dbb9892f73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, T-G</creatorcontrib><creatorcontrib>Oh, J</creatorcontrib><creatorcontrib>Kim, Y</creatorcontrib><creatorcontrib>Moon, T</creatorcontrib><creatorcontrib>Hong, K S</creatorcontrib><creatorcontrib>Park, B</creatorcontrib><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics, Part 1</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, T-G</au><au>Oh, J</au><au>Kim, Y</au><au>Moon, T</au><au>Hong, K S</au><au>Park, B</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>CRYSTALLINITY DEPENDENCE OF MICROWAVE DIELECTRIC PROPERTIES IN (Ba,Sr)TiO3 THIN FILMS</atitle><jtitle>Japanese Journal of Applied Physics, Part 1</jtitle><date>2003</date><risdate>2003</risdate><volume>42</volume><issue>3</issue><spage>1315</spage><epage>1319</epage><pages>1315-1319</pages><issn>0021-4922</issn><abstract>The dielectric properties of (Ba0.43Sr0.57)TiO3 (BST) thin films were investigated in the microwave-frequency range. The dielectric losses (tan d) and dielectric constants (e) were measured up to approximately 6 GHz using a circular-patch capacitor geometry. The deposition temperatures were varied from RT to 750 C to investigate the effects of crystallinity on the dielectric properties. As the film crystallinity was enhanced, the dielectric losses increased from 0.0024 plus/minus 0.0018 at RT to 0.0102 plus/minus 0.0017 at 750 C deposition. The dielectric constants varied from 10.29 plus/minus 0.02 to 243 plus/minus 1 in the same deposition-temperature range. Raman spectroscopy showed that the increase in dielectric losses of the BST thin films was correlated with the growth of microscopic polar regions induced by symmetry-breaking defects. Because the sizes of these regions are proportional to the dielectric constants of host lattices (crystallinity), dielectric losses increase with the deposition temperatures. 27 refs.</abstract><doi>10.1143/jjap.42.1315</doi><tpages>5</tpages></addata></record>
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title CRYSTALLINITY DEPENDENCE OF MICROWAVE DIELECTRIC PROPERTIES IN (Ba,Sr)TiO3 THIN FILMS
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T20%3A52%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=CRYSTALLINITY%20DEPENDENCE%20OF%20MICROWAVE%20DIELECTRIC%20PROPERTIES%20IN%20(Ba,Sr)TiO3%20THIN%20FILMS&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics,%20Part%201&rft.au=Kim,%20T-G&rft.date=2003&rft.volume=42&rft.issue=3&rft.spage=1315&rft.epage=1319&rft.pages=1315-1319&rft.issn=0021-4922&rft_id=info:doi/10.1143/jjap.42.1315&rft_dat=%3Cproquest%3E27825115%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-j266t-24d5f44dba66ec308d08860a9ce3fca1e148d85466bde35964e1509dbb9892f73%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27825115&rft_id=info:pmid/&rfr_iscdi=true