Defect chemistry and semiconducting properties of titanium dioxide: III. Mobility of electronic charge carriers

The present work performs quantitative analysis of the electrical conductivity data reported in the literature in terms of defect chemistry models. The analysis results in the determination of the mobility terms for electrons and electron holes leading to the following respective forms: μ n =0.106 (...

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Bibliographic Details
Published in:The Journal of physics and chemistry of solids 2003-07, Vol.64 (7), p.1069-1087
Main Authors: Bak, T., Nowotny, J., Rekas, M., Sorrell, C.C.
Format: Article
Language:English
Subjects:
A. Electronic materials
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Conductivity phenomena in semiconductors and insulators
D. Defects
D. Electrical conductivity
D. Electrical properties
D. Semiconductivity
D. Transport properties
Defects and impurities in crystals
microstructure
Electronic transport in condensed matter
Exact sciences and technology
Mobility edges
hopping transport
Physics
Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
Structure of solids and liquids
crystallography
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Summary:The present work performs quantitative analysis of the electrical conductivity data reported in the literature in terms of defect chemistry models. The analysis results in the determination of the mobility terms for electrons and electron holes leading to the following respective forms: μ n =0.106 ( cm 2 V −1 s −1) μ p =(1.05±0.89) 10 6 T exp − 0.853±0.073( eV) kT The mobility data determined in this work were then used for verification of defect chemistry disorder models and a good agreement was revealed.
ISSN:0022-3697
1879-2553
DOI:10.1016/S0022-3697(02)00481-X