Defect chemistry and semiconducting properties of titanium dioxide: II. Defect diagrams

The present work derives defect diagrams for titanium dioxide, TiO 2, within a wide range of oxygen partial pressures involving the n-type regime, the p-type regime and the n–p transition regime in the range 973–1373 K. The non-stoichiometry and related defect disorder of TiO 2 are considered in ter...

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Bibliographic Details
Published in:The Journal of physics and chemistry of solids 2003-07, Vol.64 (7), p.1057-1067
Main Authors: Bak, T., Nowotny, J., Rekas, M., Sorrell, C.C.
Format: Article
Language:English
Subjects:
A. Electronic materials
Condensed matter: structure, mechanical and thermal properties
D. Defects
D. Electrical conductivity
D. Electrical properties
D. Semiconductivity
D. Transport properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Physics
Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
Structure of solids and liquids
crystallography
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Summary:The present work derives defect diagrams for titanium dioxide, TiO 2, within a wide range of oxygen partial pressures involving the n-type regime, the p-type regime and the n–p transition regime in the range 973–1373 K. The non-stoichiometry and related defect disorder of TiO 2 are considered in terms of defects in both sub-lattices involving: • Oxygen sublattice: oxygen vacancies • Ti sublattice: Ti vacancies and Ti interstitials Defect diagrams are derived in terms of defects concentration (oxygen vacancies, tri- and four-valent Ti interstitials) as a function of oxygen partial pressure) at different levels of acceptor- and donor-type pre-imposed defects (Ti vacancies and foreign cations).
ISSN:0022-3697
1879-2553
DOI:10.1016/S0022-3697(02)00480-8