DLTS study of bonded interface in silicon-on-insulator structures annealed in hydrogen atmosphere

The results of the comparative Charge Deep Level Transient Spectroscopy study of Si/SiO 2 interfaces in silicon-on-insulator structures prepared by wafer bonding and hydrogen slicing and annealed in hydrogen ambient in the temperature range of 430–670 °C are presented in the report. At bonded interf...

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Bibliographic Details
Published in:Microelectronic engineering 2003-04, Vol.66 (1), p.547-552
Main Authors: Antonova, I.V., Stano, J., Naumova, O.V., Popov, V.P., Skuratov, V.A.
Format: Article
Language:English
Subjects:
Annealing
Bonded interface
Si/SiO 2 interface
Silicon-on-insulator
Traps
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Summary:The results of the comparative Charge Deep Level Transient Spectroscopy study of Si/SiO 2 interfaces in silicon-on-insulator structures prepared by wafer bonding and hydrogen slicing and annealed in hydrogen ambient in the temperature range of 430–670 °C are presented in the report. At bonded interface the trap transformations under hydrogen annealing are strongly discriminated from passivation of traps at Si/thermal SiO 2 interface. It was found that heat treatments at T>430 °C inhibit generation of new traps and changes in trap spectra in bonded interface.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00934-6