Defects properties in plastically deformed silicon studied by positron lifetime measurements

Positron lifetime spectra have been measured in float-zone silicon plastically deformed at different temperatures. The temperature dependences of lifetime spectra were measured for all as-deformed and annealing samples. The experimental results indicate that there are three kinds of defects (vacancy...

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Bibliographic Details
Published in:Microelectronic engineering 2003-04, Vol.66 (1), p.358-366
Main Authors: Wang, Z., Leipner, H.S., Krause-Rehberg, R., Bodarenko, V., Gu, H.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Dislocation
Exact sciences and technology
Physics
Plastic deformation
Point defects
Positron annihilation
Silicon
Structure of solids and liquids
crystallography
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Summary:Positron lifetime spectra have been measured in float-zone silicon plastically deformed at different temperatures. The temperature dependences of lifetime spectra were measured for all as-deformed and annealing samples. The experimental results indicate that there are three kinds of defects (vacancy clusters, dislocation-bound vacancies and undisturbed dislocations) induced by deformation. The size and concentration of vacancy-clusters depend on the strain temperature in the case of similar strains and strain rates. Dislocation-bound vacancies were quite stable. They could not be annealed out thoroughly after thermal treatment at 1300 °C. At sample temperatures below 120 K, regular dislocation segments have a significant influence on positron trapping. Their effect as positron shallow traps influences significantly the course of the measured average positron lifetime.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00942-5