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Defects properties in plastically deformed silicon studied by positron lifetime measurements
Positron lifetime spectra have been measured in float-zone silicon plastically deformed at different temperatures. The temperature dependences of lifetime spectra were measured for all as-deformed and annealing samples. The experimental results indicate that there are three kinds of defects (vacancy...
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| Published in: | Microelectronic engineering 2003-04, Vol.66 (1), p.358-366 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c368t-be12ce3bd1a54d09deae7b7ce2e688ce9f37d2e24e665d45486a334e808deb803 |
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| cites | cdi_FETCH-LOGICAL-c368t-be12ce3bd1a54d09deae7b7ce2e688ce9f37d2e24e665d45486a334e808deb803 |
| container_end_page | 366 |
| container_issue | 1 |
| container_start_page | 358 |
| container_title | Microelectronic engineering |
| container_volume | 66 |
| creator | Wang, Z. Leipner, H.S. Krause-Rehberg, R. Bodarenko, V. Gu, H. |
| description | Positron lifetime spectra have been measured in float-zone silicon plastically deformed at different temperatures. The temperature dependences of lifetime spectra were measured for all as-deformed and annealing samples. The experimental results indicate that there are three kinds of defects (vacancy clusters, dislocation-bound vacancies and undisturbed dislocations) induced by deformation. The size and concentration of vacancy-clusters depend on the strain temperature in the case of similar strains and strain rates. Dislocation-bound vacancies were quite stable. They could not be annealed out thoroughly after thermal treatment at 1300
°C. At sample temperatures below 120 K, regular dislocation segments have a significant influence on positron trapping. Their effect as positron shallow traps influences significantly the course of the measured average positron lifetime. |
| doi_str_mv | 10.1016/S0167-9317(02)00942-5 |
| format | article |
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°C. At sample temperatures below 120 K, regular dislocation segments have a significant influence on positron trapping. Their effect as positron shallow traps influences significantly the course of the measured average positron lifetime.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Dislocation</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Plastic deformation</subject><subject>Point defects</subject><subject>Positron annihilation</subject><subject>Silicon</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkMtKBTEMQIsoeH18gjAbRRejfc50ViK-QXCh7oTSaTNQmZdNr3D_3uoVXbpJSDhJyCHkgNFTRll19pRDXTaC1ceUn1DaSF6qDbJguhalUpXeJItfZJvsIL7RXEuqF-T1CjpwCYs5TjPEFACLMBZzbzEFZ_t-VXjopjiALzD0wU1jgWnpQ67bVTFPGFLMvT50kMIAxQAWlxEGGBPuka3O9gj7P3mXvNxcP1_elQ-Pt_eXFw-lE5VOZQuMOxCtZ1ZJTxsPFuq2dsCh0tpB04nac-ASqkp5qaSurBASNNUeWk3FLjla781PvC8BkxkCOuh7O8K0RMNrLbhWMoNqDbo4IUbozBzDYOPKMGq-XJpvl-ZLlKHcfLs0Ks8d_hywmKV00Y4u4N-w1KxpmMjc-ZqD_O1HgGjQBRgd-BCzZeOn8M-lT3JxizM</recordid><startdate>20030401</startdate><enddate>20030401</enddate><creator>Wang, Z.</creator><creator>Leipner, H.S.</creator><creator>Krause-Rehberg, R.</creator><creator>Bodarenko, V.</creator><creator>Gu, H.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20030401</creationdate><title>Defects properties in plastically deformed silicon studied by positron lifetime measurements</title><author>Wang, Z. ; Leipner, H.S. ; Krause-Rehberg, R. ; Bodarenko, V. ; Gu, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-be12ce3bd1a54d09deae7b7ce2e688ce9f37d2e24e665d45486a334e808deb803</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Dislocation</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Plastic deformation</topic><topic>Point defects</topic><topic>Positron annihilation</topic><topic>Silicon</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Z.</creatorcontrib><creatorcontrib>Leipner, H.S.</creatorcontrib><creatorcontrib>Krause-Rehberg, R.</creatorcontrib><creatorcontrib>Bodarenko, V.</creatorcontrib><creatorcontrib>Gu, H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Z.</au><au>Leipner, H.S.</au><au>Krause-Rehberg, R.</au><au>Bodarenko, V.</au><au>Gu, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Defects properties in plastically deformed silicon studied by positron lifetime measurements</atitle><jtitle>Microelectronic engineering</jtitle><date>2003-04-01</date><risdate>2003</risdate><volume>66</volume><issue>1</issue><spage>358</spage><epage>366</epage><pages>358-366</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>Positron lifetime spectra have been measured in float-zone silicon plastically deformed at different temperatures. The temperature dependences of lifetime spectra were measured for all as-deformed and annealing samples. The experimental results indicate that there are three kinds of defects (vacancy clusters, dislocation-bound vacancies and undisturbed dislocations) induced by deformation. The size and concentration of vacancy-clusters depend on the strain temperature in the case of similar strains and strain rates. Dislocation-bound vacancies were quite stable. They could not be annealed out thoroughly after thermal treatment at 1300
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| ispartof | Microelectronic engineering, 2003-04, Vol.66 (1), p.358-366 |
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| language | eng |
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| source | ScienceDirect Freedom Collection |
| subjects | Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Dislocation Exact sciences and technology Physics Plastic deformation Point defects Positron annihilation Silicon Structure of solids and liquids crystallography |
| title | Defects properties in plastically deformed silicon studied by positron lifetime measurements |
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