Densification of In2O3:Sn multilayered films elaborated by the dip-coating sol-gel route

Indium Tin Oxide (ITO) thin films have been deposited by the Sol-Gel Dip-Coating technique, the starting solutions being prepared from chlorides. These multilayered films were crystallized by means of a classical heat treatment at temperatures ranging from 500 to 600 DGC. Five stacked layers are nec...

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Bibliographic Details
Published in:Thin solid films 2003-11, Vol.445 (1), p.20-25
Main Authors: DAOUDI, K, CANUT, B, BLANCHIN, M. G, SANDU, C. S, TEODORESCU, V. S, ROGER, J. A
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Liquid phase epitaxy
deposition from liquid phases (melts, solutions, and surface layers on liquids)
Materials science
Materials synthesis
materials processing
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Sol-gel processing, precipitation
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Summary:Indium Tin Oxide (ITO) thin films have been deposited by the Sol-Gel Dip-Coating technique, the starting solutions being prepared from chlorides. These multilayered films were crystallized by means of a classical heat treatment at temperatures ranging from 500 to 600 DGC. Five stacked layers are necessary to obtain a global electrical resistivity value of 2.9x10-3 *W cm, for 500 DGC annealed film. The paper focuses on the study of the structure of such multilayered deposits, and on the densification process, using transmission electron microscopy, Rutherford Back-scattering Spectrometry and electrical resistivity measurements. This analysis reveals structural inhomogeneities and different crystallite growth processes as a function of annealing temperature and number of deposited layers.
ISSN:0040-6090
1879-2731
DOI:10.1016/s0040-6090(03)01061-7