Loading…

Defect profile and microstructural development in SnO2-based varistors

The influence of Co3O4, ZnO, MnO2, Sb2O3, and Nb2O5 on microstructural development, secondary phase formation, lattice volume, defect structure and electrical behaviour of SnO2 was studied. The stabilised valence state of the added ions in the SnO2 lattice was also analysed. It was found that cobalt...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the European Ceramic Society 2003-09, Vol.23 (10), p.1585-1591
Main Authors: FAYAT, J, CASTRO, M. S
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c312t-443f96a42c6fce23c6dd3334b9c694822f436911d31b2a8fc149a9f6fe6e27223
cites cdi_FETCH-LOGICAL-c312t-443f96a42c6fce23c6dd3334b9c694822f436911d31b2a8fc149a9f6fe6e27223
container_end_page 1591
container_issue 10
container_start_page 1585
container_title Journal of the European Ceramic Society
container_volume 23
creator FAYAT, J
CASTRO, M. S
description The influence of Co3O4, ZnO, MnO2, Sb2O3, and Nb2O5 on microstructural development, secondary phase formation, lattice volume, defect structure and electrical behaviour of SnO2 was studied. The stabilised valence state of the added ions in the SnO2 lattice was also analysed. It was found that cobalt, zinc and manganese stabilise as Co+2, Zn+2 and Mn+2 in the lattice, favouring oxygen vacancy formation and then grain growth and potential barrier formation. Sb2O3 or Nb2O5 reduces the total oxygen vacancy concentration and grain growth. Sb2O3 addition favours CoSnO3 particle formation, while Nb2O5 favours the formation of particles with an intermediate composition between CoSnO3 and Co2SnO4 in systems with Co3O4. These particles could also control the sintering and grain growth rates. 24 refs.
doi_str_mv 10.1016/S0955-2219(02)00405-3
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27835679</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27835679</sourcerecordid><originalsourceid>FETCH-LOGICAL-c312t-443f96a42c6fce23c6dd3334b9c694822f436911d31b2a8fc149a9f6fe6e27223</originalsourceid><addsrcrecordid>eNpFkE1LAzEQhoMoWKs_QdiLoofVZCab3RyltSoUeqiCt5BmJ7CyHzXZLfjv7Rd6msvzvjPzMHYt-IPgQj0uuc6yFEDoOw73nEuepXjCRqLIMVVCf56y0R9yzi5i_OJc5FzrEZtNyZPrk3XofFVTYtsyaSoXutiHwfVDsHVS0obqbt1Q2ydVmyzbBaQrG6lMNjZUse9CvGRn3taRro5zzD5mz--T13S-eHmbPM1ThwL6VEr0WlkJTnlHgE6VJSLKlXZKywLAS1RaiBLFCmzhnZDaaq88KYIcAMfs9tC7vfd7oNibpoqO6tq21A3RQF5gpnK9BbMDuHslBvJmHarGhh8juNlZM3trZqfEcDB7awa3uZvjAhudrX2wravif1gWKBUo_AW2OGzm</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27835679</pqid></control><display><type>article</type><title>Defect profile and microstructural development in SnO2-based varistors</title><source>ScienceDirect Journals</source><creator>FAYAT, J ; CASTRO, M. S</creator><contributor>WCA</contributor><creatorcontrib>FAYAT, J ; CASTRO, M. S ; WCA</creatorcontrib><description>The influence of Co3O4, ZnO, MnO2, Sb2O3, and Nb2O5 on microstructural development, secondary phase formation, lattice volume, defect structure and electrical behaviour of SnO2 was studied. The stabilised valence state of the added ions in the SnO2 lattice was also analysed. It was found that cobalt, zinc and manganese stabilise as Co+2, Zn+2 and Mn+2 in the lattice, favouring oxygen vacancy formation and then grain growth and potential barrier formation. Sb2O3 or Nb2O5 reduces the total oxygen vacancy concentration and grain growth. Sb2O3 addition favours CoSnO3 particle formation, while Nb2O5 favours the formation of particles with an intermediate composition between CoSnO3 and Co2SnO4 in systems with Co3O4. These particles could also control the sintering and grain growth rates. 24 refs.</description><identifier>ISSN: 0955-2219</identifier><identifier>EISSN: 1873-619X</identifier><identifier>DOI: 10.1016/S0955-2219(02)00405-3</identifier><language>eng</language><publisher>Oxford: Elsevier</publisher><subject>Applied sciences ; Building materials. Ceramics. Glasses ; Ceramic industries ; Chemical industry and chemicals ; Conductors, resistors (including thermistors, varistors, and photoresistors) ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Electrotechnical and electronic ceramics ; Exact sciences and technology ; Technical ceramics</subject><ispartof>Journal of the European Ceramic Society, 2003-09, Vol.23 (10), p.1585-1591</ispartof><rights>2003 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c312t-443f96a42c6fce23c6dd3334b9c694822f436911d31b2a8fc149a9f6fe6e27223</citedby><cites>FETCH-LOGICAL-c312t-443f96a42c6fce23c6dd3334b9c694822f436911d31b2a8fc149a9f6fe6e27223</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=14834626$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><contributor>WCA</contributor><creatorcontrib>FAYAT, J</creatorcontrib><creatorcontrib>CASTRO, M. S</creatorcontrib><title>Defect profile and microstructural development in SnO2-based varistors</title><title>Journal of the European Ceramic Society</title><description>The influence of Co3O4, ZnO, MnO2, Sb2O3, and Nb2O5 on microstructural development, secondary phase formation, lattice volume, defect structure and electrical behaviour of SnO2 was studied. The stabilised valence state of the added ions in the SnO2 lattice was also analysed. It was found that cobalt, zinc and manganese stabilise as Co+2, Zn+2 and Mn+2 in the lattice, favouring oxygen vacancy formation and then grain growth and potential barrier formation. Sb2O3 or Nb2O5 reduces the total oxygen vacancy concentration and grain growth. Sb2O3 addition favours CoSnO3 particle formation, while Nb2O5 favours the formation of particles with an intermediate composition between CoSnO3 and Co2SnO4 in systems with Co3O4. These particles could also control the sintering and grain growth rates. 24 refs.</description><subject>Applied sciences</subject><subject>Building materials. Ceramics. Glasses</subject><subject>Ceramic industries</subject><subject>Chemical industry and chemicals</subject><subject>Conductors, resistors (including thermistors, varistors, and photoresistors)</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Electrotechnical and electronic ceramics</subject><subject>Exact sciences and technology</subject><subject>Technical ceramics</subject><issn>0955-2219</issn><issn>1873-619X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNpFkE1LAzEQhoMoWKs_QdiLoofVZCab3RyltSoUeqiCt5BmJ7CyHzXZLfjv7Rd6msvzvjPzMHYt-IPgQj0uuc6yFEDoOw73nEuepXjCRqLIMVVCf56y0R9yzi5i_OJc5FzrEZtNyZPrk3XofFVTYtsyaSoXutiHwfVDsHVS0obqbt1Q2ydVmyzbBaQrG6lMNjZUse9CvGRn3taRro5zzD5mz--T13S-eHmbPM1ThwL6VEr0WlkJTnlHgE6VJSLKlXZKywLAS1RaiBLFCmzhnZDaaq88KYIcAMfs9tC7vfd7oNibpoqO6tq21A3RQF5gpnK9BbMDuHslBvJmHarGhh8juNlZM3trZqfEcDB7awa3uZvjAhudrX2wravif1gWKBUo_AW2OGzm</recordid><startdate>20030901</startdate><enddate>20030901</enddate><creator>FAYAT, J</creator><creator>CASTRO, M. S</creator><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20030901</creationdate><title>Defect profile and microstructural development in SnO2-based varistors</title><author>FAYAT, J ; CASTRO, M. S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c312t-443f96a42c6fce23c6dd3334b9c694822f436911d31b2a8fc149a9f6fe6e27223</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Applied sciences</topic><topic>Building materials. Ceramics. Glasses</topic><topic>Ceramic industries</topic><topic>Chemical industry and chemicals</topic><topic>Conductors, resistors (including thermistors, varistors, and photoresistors)</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Electrotechnical and electronic ceramics</topic><topic>Exact sciences and technology</topic><topic>Technical ceramics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>FAYAT, J</creatorcontrib><creatorcontrib>CASTRO, M. S</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the European Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>FAYAT, J</au><au>CASTRO, M. S</au><au>WCA</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Defect profile and microstructural development in SnO2-based varistors</atitle><jtitle>Journal of the European Ceramic Society</jtitle><date>2003-09-01</date><risdate>2003</risdate><volume>23</volume><issue>10</issue><spage>1585</spage><epage>1591</epage><pages>1585-1591</pages><issn>0955-2219</issn><eissn>1873-619X</eissn><abstract>The influence of Co3O4, ZnO, MnO2, Sb2O3, and Nb2O5 on microstructural development, secondary phase formation, lattice volume, defect structure and electrical behaviour of SnO2 was studied. The stabilised valence state of the added ions in the SnO2 lattice was also analysed. It was found that cobalt, zinc and manganese stabilise as Co+2, Zn+2 and Mn+2 in the lattice, favouring oxygen vacancy formation and then grain growth and potential barrier formation. Sb2O3 or Nb2O5 reduces the total oxygen vacancy concentration and grain growth. Sb2O3 addition favours CoSnO3 particle formation, while Nb2O5 favours the formation of particles with an intermediate composition between CoSnO3 and Co2SnO4 in systems with Co3O4. These particles could also control the sintering and grain growth rates. 24 refs.</abstract><cop>Oxford</cop><pub>Elsevier</pub><doi>10.1016/S0955-2219(02)00405-3</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0955-2219
ispartof Journal of the European Ceramic Society, 2003-09, Vol.23 (10), p.1585-1591
issn 0955-2219
1873-619X
language eng
recordid cdi_proquest_miscellaneous_27835679
source ScienceDirect Journals
subjects Applied sciences
Building materials. Ceramics. Glasses
Ceramic industries
Chemical industry and chemicals
Conductors, resistors (including thermistors, varistors, and photoresistors)
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Electrotechnical and electronic ceramics
Exact sciences and technology
Technical ceramics
title Defect profile and microstructural development in SnO2-based varistors
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T15%3A59%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Defect%20profile%20and%20microstructural%20development%20in%20SnO2-based%20varistors&rft.jtitle=Journal%20of%20the%20European%20Ceramic%20Society&rft.au=FAYAT,%20J&rft.date=2003-09-01&rft.volume=23&rft.issue=10&rft.spage=1585&rft.epage=1591&rft.pages=1585-1591&rft.issn=0955-2219&rft.eissn=1873-619X&rft_id=info:doi/10.1016/S0955-2219(02)00405-3&rft_dat=%3Cproquest_cross%3E27835679%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c312t-443f96a42c6fce23c6dd3334b9c694822f436911d31b2a8fc149a9f6fe6e27223%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27835679&rft_id=info:pmid/&rfr_iscdi=true