Liquid phase deposited SiO2 on GaN

An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form the silicon dioxide layers. The deposition c...

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Bibliographic Details
Published in:Materials chemistry and physics 2003-04, Vol.80 (1), p.329-333
Main Authors: WU, H. R, LEE, K. W, HO, C. H, CHIANG, C. I, CHERN, Y. T, JUANG, F. S, WEN, T. C, LEE, W. I, CHYI, J. I, NIAN, T. B, CHOU, D. W, HUANG WU, J. J, WANG, Y. H, HOUNG, M. P, SZE, P. W, SU, Y. K, CHANGE, S. J
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Liquid phase epitaxy
deposition from liquid phases (melts, solutions, and surface layers on liquids)
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form the silicon dioxide layers. The deposition conditions and the properties of the SiO2 films will be characterized.
ISSN:0254-0584
1879-3312
DOI:10.1016/S0254-0584(02)00504-7