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Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxy
We report low-temperature (LT) growth of self-assembled InAs dots on GaAs by molecular beam epitaxy. Atomic force microscopy reveals well-developed InAs dots grown at LT (250°C) on top of a LT GaAs bottom layer after post-growth annealing above 450°C. When the InAs dots are overgrown by LT GaAs, how...
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Published in: | Journal of crystal growth 2003-04, Vol.251 (1), p.135-139 |
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container_title | Journal of crystal growth |
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creator | Zhan, H.H. Nötzel, R. Hamhuis, G.J. Eijkemans, T.J. Wolter, J.H. |
description | We report low-temperature (LT) growth of self-assembled InAs dots on GaAs by molecular beam epitaxy. Atomic force microscopy reveals well-developed InAs dots grown at LT (250°C) on top of a LT GaAs bottom layer after post-growth annealing above 450°C. When the InAs dots are overgrown by LT GaAs, however, X-ray diffraction reveals poor structural quality of the dot- and the LT GaAs top layers. Excellent structural quality of the InAs dots and LT GaAs top layer is achieved when the dots, before LT GaAs overgrowth, are capped with a thin (3
nm) GaAs interlayer at 480°C and subsequently annealed at 580°C. Realization of these high-quality InAs dots grown at low substrate temperature may be useful for ultra-fast response optical devices. |
doi_str_mv | 10.1016/S0022-0248(02)02469-7 |
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nm) GaAs interlayer at 480°C and subsequently annealed at 580°C. Realization of these high-quality InAs dots grown at low substrate temperature may be useful for ultra-fast response optical devices.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/S0022-0248(02)02469-7</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A2. Low temperature growth ; A3. Molecular beam epitaxy ; A3. Self-assembled InAs quantum dots ; B1. GaAs ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Molecular, atomic, ion, and chemical beam epitaxy ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Journal of crystal growth, 2003-04, Vol.251 (1), p.135-139</ispartof><rights>2003 Elsevier Science B.V.</rights><rights>2003 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-27a0106ca3866013a36788379d6036de953dbe5d50201511e56a7b3617347c773</citedby><cites>FETCH-LOGICAL-c368t-27a0106ca3866013a36788379d6036de953dbe5d50201511e56a7b3617347c773</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14687749$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhan, H.H.</creatorcontrib><creatorcontrib>Nötzel, R.</creatorcontrib><creatorcontrib>Hamhuis, G.J.</creatorcontrib><creatorcontrib>Eijkemans, T.J.</creatorcontrib><creatorcontrib>Wolter, J.H.</creatorcontrib><title>Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxy</title><title>Journal of crystal growth</title><description>We report low-temperature (LT) growth of self-assembled InAs dots on GaAs by molecular beam epitaxy. Atomic force microscopy reveals well-developed InAs dots grown at LT (250°C) on top of a LT GaAs bottom layer after post-growth annealing above 450°C. When the InAs dots are overgrown by LT GaAs, however, X-ray diffraction reveals poor structural quality of the dot- and the LT GaAs top layers. Excellent structural quality of the InAs dots and LT GaAs top layer is achieved when the dots, before LT GaAs overgrowth, are capped with a thin (3
nm) GaAs interlayer at 480°C and subsequently annealed at 580°C. Realization of these high-quality InAs dots grown at low substrate temperature may be useful for ultra-fast response optical devices.</description><subject>A2. Low temperature growth</subject><subject>A3. Molecular beam epitaxy</subject><subject>A3. Self-assembled InAs quantum dots</subject><subject>B1. GaAs</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Molecular, atomic, ion, and chemical beam epitaxy</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkE9LxDAQxYMouK5-BCEXRQ_VSdMm2ZPIouvCggfXc0jTqVbapiat6357u3_Qo5d5DPObecwj5JzBDQMmbl8A4jiCOFFXEF8PKiaRPCAjpiSP0mF4SEa_yDE5CeEDYFhkMCLLhVtFHdYtetP1Humbd6vunbqCBqyKyISAdVZhTufNfaC56wJ1DZ2ZocnWtHYV2r4ynmZoaopt2Znv9Sk5KkwV8GyvY_L6-LCcPkWL59l8er-ILBeqi2JpgIGwhishgHHDhVSKy0kugIscJynPM0zzFGJgKWOYCiMzLpjkibRS8jG53N1tvfvsMXS6LoPFqjINuj7oWCquUgkDmO5A610IHgvd-rI2fq0Z6E2Gepuh3gQ0FL3NUG8MLvYGJlhTFd40tgx_y4lQUiaTgbvbcTh8-1Wi18GW2FjMS4-207kr_3H6AVrUg7s</recordid><startdate>20030401</startdate><enddate>20030401</enddate><creator>Zhan, H.H.</creator><creator>Nötzel, R.</creator><creator>Hamhuis, G.J.</creator><creator>Eijkemans, T.J.</creator><creator>Wolter, J.H.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20030401</creationdate><title>Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxy</title><author>Zhan, H.H. ; Nötzel, R. ; Hamhuis, G.J. ; Eijkemans, T.J. ; Wolter, J.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-27a0106ca3866013a36788379d6036de953dbe5d50201511e56a7b3617347c773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>A2. Low temperature growth</topic><topic>A3. Molecular beam epitaxy</topic><topic>A3. Self-assembled InAs quantum dots</topic><topic>B1. GaAs</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Molecular, atomic, ion, and chemical beam epitaxy</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhan, H.H.</creatorcontrib><creatorcontrib>Nötzel, R.</creatorcontrib><creatorcontrib>Hamhuis, G.J.</creatorcontrib><creatorcontrib>Eijkemans, T.J.</creatorcontrib><creatorcontrib>Wolter, J.H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhan, H.H.</au><au>Nötzel, R.</au><au>Hamhuis, G.J.</au><au>Eijkemans, T.J.</au><au>Wolter, J.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxy</atitle><jtitle>Journal of crystal growth</jtitle><date>2003-04-01</date><risdate>2003</risdate><volume>251</volume><issue>1</issue><spage>135</spage><epage>139</epage><pages>135-139</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>We report low-temperature (LT) growth of self-assembled InAs dots on GaAs by molecular beam epitaxy. Atomic force microscopy reveals well-developed InAs dots grown at LT (250°C) on top of a LT GaAs bottom layer after post-growth annealing above 450°C. When the InAs dots are overgrown by LT GaAs, however, X-ray diffraction reveals poor structural quality of the dot- and the LT GaAs top layers. Excellent structural quality of the InAs dots and LT GaAs top layer is achieved when the dots, before LT GaAs overgrowth, are capped with a thin (3
nm) GaAs interlayer at 480°C and subsequently annealed at 580°C. Realization of these high-quality InAs dots grown at low substrate temperature may be useful for ultra-fast response optical devices.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/S0022-0248(02)02469-7</doi><tpages>5</tpages></addata></record> |
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subjects | A2. Low temperature growth A3. Molecular beam epitaxy A3. Self-assembled InAs quantum dots B1. GaAs Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
title | Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxy |
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