Depth resolved investigations of boron implanted silicon

We have studied the depth distribution and structure of defects in boron implanted silicon (0 0 1). Silicon wafers were implanted with a boron dose of 6×10 15 ions/cm −2 at 32 keV and went through different annealing treatments. Using diffuse X-ray scattering at grazing incidence and exit angles we...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2003, Vol.200 (Complete), p.52-59
Main Authors: Sztucki, M, Metzger, T.H, Milita, S, Berberich, F, Schell, N, Rouvière, J.L, Patel, J
Format: Article
Language:English
Subjects:
Defects
Diffuse X-ray scattering
Ion implantation
Transmission electron microscopy
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Summary:We have studied the depth distribution and structure of defects in boron implanted silicon (0 0 1). Silicon wafers were implanted with a boron dose of 6×10 15 ions/cm −2 at 32 keV and went through different annealing treatments. Using diffuse X-ray scattering at grazing incidence and exit angles we are able to distinguish between different kinds of defects (point defect clusters and extrinsic stacking faults on {1 1 1} planes) and to determine their depth distribution as a function of the thermal budget. Cross-section transmission electron microscopy was used to gain complementary information. In addition we have determined the strain distribution caused by the boron implantation as a function of depth from rocking curve measurements.
ISSN:0168-583X
1872-9584
DOI:10.1016/S0168-583X(02)01674-9