Micro-X-ray fluorescence and micro-photoluminescence in InGaAsP and InGaAs layers obtained by selective area growth

• Published in: Journal of crystal growth 2003-06, Vol.253 (1), p.38-45
• Main Authors: Sirenko, A.A., Reynolds, C.L., Peticolas, L.J., Ougazzaden, A., Kazimirov, A., Huang, Rong, Fontes, E., Bilderback, D.
• Format: Article
• Language: English
• Subjects: A1. Synchrotron radiation; A1. X-ray fluorescence; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. InGaAsP-InP; B2. Semiconducting quaternary alloys; Composition and phase identification; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Iii-v semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other interactions of matter with particles and radiation; Photoluminescence; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; X-ray emission spectra and fluorescence; X-ray emission threshold and fluorescence
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(03)00996-5

Properties of selective-area-grown (SAG) ternary and quaternary layers of InGaAs and InGaAsP produced by metal organic vapor phase epitaxy (MOVPE) have been investigated by using a combination of micro-photoluminescence and synchrotron-based micro-beam X-ray fluorescence techniques. Significant variations of the group-III element composition with increase of the oxide mask width and with decrease of the gap between the masks were observed in both ternary and quaternary layers. In contrast, concentration of the group-V elements in quaternary layers does not show any significant change. Effects of the SAG growth on variations of the group-III element composition become more pronounced with increase of the growth pressure.