Modified Poole–Frenkel mechanisms in Ge25BixSb15−xS60 thin films

The current-voltage (I-V) characteristics of amorphous Ge25BixSb15-xS60 (x = 0, 5, 10 and 15) thin film samples sandwiched between metal electrodes have been investigated as a function of composition, deposition rate (0.61-2.65 nm s-1), film thickness (128.6-598.2 nm) and temperature (130-373 K). Th...

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Bibliographic Details
Published in:Applied surface science 2003-02, Vol.207 (1-4), p.219-226
Main Author: El-Samanoudy, M.M
Format: Article
Language:English
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Summary:The current-voltage (I-V) characteristics of amorphous Ge25BixSb15-xS60 (x = 0, 5, 10 and 15) thin film samples sandwiched between metal electrodes have been investigated as a function of composition, deposition rate (0.61-2.65 nm s-1), film thickness (128.6-598.2 nm) and temperature (130-373 K). The current-voltage characteristics are ohmic in the lower field regime followed by non-ohmic behavior in the higher voltage regime, which has been satisfactorily explained by the modified Poole-Frenkel effect. The experimentally determined values of Poole-Frenkel factor (*bPF) for different film composition, deposition rate and thicknesses are in good agreement with the theoretically calculated values. Fitting the room temperature data with Jonscher's field-independent re-trapping model is an indication that a modified Poole-Frenkel process is operating. The Hall model can account for the low-temperature dielectric constant, and gives an indication of modified Poole-Frenkel emission.
ISSN:0169-4332
DOI:10.1016/S0169-4332(02)01365-X