Fabrication and Microstructure Characterization of Ti3SiC2 Synthesized from Ti/Si/2TiC Powders Using the Pulse Discharge Sintering (PDS) Technique

Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti3SiC2 at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti3SiC2 samples with 18 wt% in the MA samples. Further sintering of the M powder showe...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2003-03, Vol.86 (3), p.431-436
Main Authors: Zhang, Zhe-Feng, Sun, Zheng Ming, Hashimoto, Hitoshi, Abe, Toshihiko
Format: Article
Language:English
Subjects:
carbides
silicon
sinter/sintering
titanium
Online Access:Get full text
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Summary:Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti3SiC2 at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti3SiC2 samples with 18 wt% in the MA samples. Further sintering of the M powder showed that the purity of Ti3SiC2 could be improved to >97 wt% at 1250°–1300°C, which is ∼200°–300°C lower than that of sintered Ti/Si/C and Ti/SiC/C powders using the hot isostatic pressing (HIPing) technique. The microstructure of Ti3SiC2 also could be controlled using three types of powders, i.e., fine, coarse, or duplex‐grained, within the sintering temperature range. In comparison with Ti/Si/C and Ti/SiC/C mixture powders, it has been suggested that high‐purity Ti3SiC2 could be rapidly synthesized by sintering the Ti/Si/TiC powder mixture at relatively lower temperature using the PDS technique.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.2003.tb03317.x