Fabrication and Microstructure Characterization of Ti3SiC2 Synthesized from Ti/Si/2TiC Powders Using the Pulse Discharge Sintering (PDS) Technique

Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti3SiC2 at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti3SiC2 samples with 18 wt% in the MA samples. Further sintering of the M powder showe...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the American Ceramic Society 2003-03, Vol.86 (3), p.431-436
Main Authors: Zhang, Zhe-Feng, Sun, Zheng Ming, Hashimoto, Hitoshi, Abe, Toshihiko
Format: Article
Language:English
Subjects:
carbides
silicon
sinter/sintering
titanium
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 436
container_issue 3
container_start_page 431
container_title Journal of the American Ceramic Society
container_volume 86
creator Zhang, Zhe-Feng
Sun, Zheng Ming
Hashimoto, Hitoshi
Abe, Toshihiko
description Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti3SiC2 at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti3SiC2 samples with 18 wt% in the MA samples. Further sintering of the M powder showed that the purity of Ti3SiC2 could be improved to >97 wt% at 1250°–1300°C, which is ∼200°–300°C lower than that of sintered Ti/Si/C and Ti/SiC/C powders using the hot isostatic pressing (HIPing) technique. The microstructure of Ti3SiC2 also could be controlled using three types of powders, i.e., fine, coarse, or duplex‐grained, within the sintering temperature range. In comparison with Ti/Si/C and Ti/SiC/C mixture powders, it has been suggested that high‐purity Ti3SiC2 could be rapidly synthesized by sintering the Ti/Si/TiC powder mixture at relatively lower temperature using the PDS technique.
doi_str_mv 10.1111/j.1151-2916.2003.tb03317.x
format article
fullrecord <record><control><sourceid>proquest_wiley</sourceid><recordid>TN_cdi_proquest_miscellaneous_27856240</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27854213</sourcerecordid><originalsourceid>FETCH-LOGICAL-i4061-91d506c00a1068169bf3d321cd8f046f77d910aaaebe7f3ecfcf20c5003b66123</originalsourceid><addsrcrecordid>eNqNkV1P2zAUhq0JpBW2_2BxgcZF2mM7cZKrCaV8bIKtW4J2aTmOTV3aBOxEtPyM_eI5arVrfHNkvY8eW-dF6IzAlIQzW4WRkIjmhE8pAJv2NTBG0un2A5qQ5BAdoQkA0CjNKHxEJ96vwpXkWTxBf69l7aySve1aLNsG31vlOt-7QfWD07hYSidVr5192zOdwZVlpS0oLndtv9TevukGG9dtQjAr7YxWtsCL7rXRzuMHb9tHHDC8GNZe47n1KigfNS5tO2pD-mUxLy9wpdWytS-D_oSOjQzs58M8RQ_XV1VxG939vPlWXN5FNgZOopw0CXAFIAnwjPC8NqxhlKgmMxBzk6ZNTkBKqWudGqaVUYaCSsKWas4JZafofO99dl141vdiEz6n12vZ6m7wgqZZwmkM7wJjStj7wLD3AH7dg692rXfi2dmNdDtBQIytipUYWxVjdWJsVRxaFVvx_bK4ihkJhmhvsL7X2_8G6Z4ET1maiD8_bsR8UWWc_crEb_YPjiOosA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27854198</pqid></control><display><type>article</type><title>Fabrication and Microstructure Characterization of Ti3SiC2 Synthesized from Ti/Si/2TiC Powders Using the Pulse Discharge Sintering (PDS) Technique</title><source>Wiley-Blackwell Read &amp; Publish Collection</source><creator>Zhang, Zhe-Feng ; Sun, Zheng Ming ; Hashimoto, Hitoshi ; Abe, Toshihiko</creator><contributor>WCA</contributor><creatorcontrib>Zhang, Zhe-Feng ; Sun, Zheng Ming ; Hashimoto, Hitoshi ; Abe, Toshihiko ; WCA</creatorcontrib><description>Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti3SiC2 at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti3SiC2 samples with &lt;5 wt% TiC could be rapidly synthesized from the M powders; however, the TiC content was always &gt;18 wt% in the MA samples. Further sintering of the M powder showed that the purity of Ti3SiC2 could be improved to &gt;97 wt% at 1250°–1300°C, which is ∼200°–300°C lower than that of sintered Ti/Si/C and Ti/SiC/C powders using the hot isostatic pressing (HIPing) technique. The microstructure of Ti3SiC2 also could be controlled using three types of powders, i.e., fine, coarse, or duplex‐grained, within the sintering temperature range. In comparison with Ti/Si/C and Ti/SiC/C mixture powders, it has been suggested that high‐purity Ti3SiC2 could be rapidly synthesized by sintering the Ti/Si/TiC powder mixture at relatively lower temperature using the PDS technique.</description><identifier>ISSN: 0002-7820</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/j.1151-2916.2003.tb03317.x</identifier><language>eng</language><publisher>Westerville, Ohio: American Ceramics Society</publisher><subject>carbides ; silicon ; sinter/sintering ; titanium</subject><ispartof>Journal of the American Ceramic Society, 2003-03, Vol.86 (3), p.431-436</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><contributor>WCA</contributor><creatorcontrib>Zhang, Zhe-Feng</creatorcontrib><creatorcontrib>Sun, Zheng Ming</creatorcontrib><creatorcontrib>Hashimoto, Hitoshi</creatorcontrib><creatorcontrib>Abe, Toshihiko</creatorcontrib><title>Fabrication and Microstructure Characterization of Ti3SiC2 Synthesized from Ti/Si/2TiC Powders Using the Pulse Discharge Sintering (PDS) Technique</title><title>Journal of the American Ceramic Society</title><description>Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti3SiC2 at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti3SiC2 samples with &lt;5 wt% TiC could be rapidly synthesized from the M powders; however, the TiC content was always &gt;18 wt% in the MA samples. Further sintering of the M powder showed that the purity of Ti3SiC2 could be improved to &gt;97 wt% at 1250°–1300°C, which is ∼200°–300°C lower than that of sintered Ti/Si/C and Ti/SiC/C powders using the hot isostatic pressing (HIPing) technique. The microstructure of Ti3SiC2 also could be controlled using three types of powders, i.e., fine, coarse, or duplex‐grained, within the sintering temperature range. In comparison with Ti/Si/C and Ti/SiC/C mixture powders, it has been suggested that high‐purity Ti3SiC2 could be rapidly synthesized by sintering the Ti/Si/TiC powder mixture at relatively lower temperature using the PDS technique.</description><subject>carbides</subject><subject>silicon</subject><subject>sinter/sintering</subject><subject>titanium</subject><issn>0002-7820</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqNkV1P2zAUhq0JpBW2_2BxgcZF2mM7cZKrCaV8bIKtW4J2aTmOTV3aBOxEtPyM_eI5arVrfHNkvY8eW-dF6IzAlIQzW4WRkIjmhE8pAJv2NTBG0un2A5qQ5BAdoQkA0CjNKHxEJ96vwpXkWTxBf69l7aySve1aLNsG31vlOt-7QfWD07hYSidVr5192zOdwZVlpS0oLndtv9TevukGG9dtQjAr7YxWtsCL7rXRzuMHb9tHHDC8GNZe47n1KigfNS5tO2pD-mUxLy9wpdWytS-D_oSOjQzs58M8RQ_XV1VxG939vPlWXN5FNgZOopw0CXAFIAnwjPC8NqxhlKgmMxBzk6ZNTkBKqWudGqaVUYaCSsKWas4JZafofO99dl141vdiEz6n12vZ6m7wgqZZwmkM7wJjStj7wLD3AH7dg692rXfi2dmNdDtBQIytipUYWxVjdWJsVRxaFVvx_bK4ihkJhmhvsL7X2_8G6Z4ET1maiD8_bsR8UWWc_crEb_YPjiOosA</recordid><startdate>200303</startdate><enddate>200303</enddate><creator>Zhang, Zhe-Feng</creator><creator>Sun, Zheng Ming</creator><creator>Hashimoto, Hitoshi</creator><creator>Abe, Toshihiko</creator><general>American Ceramics Society</general><scope>BSCLL</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope><scope>H8D</scope><scope>L7M</scope><scope>7QQ</scope></search><sort><creationdate>200303</creationdate><title>Fabrication and Microstructure Characterization of Ti3SiC2 Synthesized from Ti/Si/2TiC Powders Using the Pulse Discharge Sintering (PDS) Technique</title><author>Zhang, Zhe-Feng ; Sun, Zheng Ming ; Hashimoto, Hitoshi ; Abe, Toshihiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i4061-91d506c00a1068169bf3d321cd8f046f77d910aaaebe7f3ecfcf20c5003b66123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>carbides</topic><topic>silicon</topic><topic>sinter/sintering</topic><topic>titanium</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Zhe-Feng</creatorcontrib><creatorcontrib>Sun, Zheng Ming</creatorcontrib><creatorcontrib>Hashimoto, Hitoshi</creatorcontrib><creatorcontrib>Abe, Toshihiko</creatorcontrib><collection>Istex</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><jtitle>Journal of the American Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Zhe-Feng</au><au>Sun, Zheng Ming</au><au>Hashimoto, Hitoshi</au><au>Abe, Toshihiko</au><au>WCA</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and Microstructure Characterization of Ti3SiC2 Synthesized from Ti/Si/2TiC Powders Using the Pulse Discharge Sintering (PDS) Technique</atitle><jtitle>Journal of the American Ceramic Society</jtitle><date>2003-03</date><risdate>2003</risdate><volume>86</volume><issue>3</issue><spage>431</spage><epage>436</epage><pages>431-436</pages><issn>0002-7820</issn><eissn>1551-2916</eissn><abstract>Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti3SiC2 at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti3SiC2 samples with &lt;5 wt% TiC could be rapidly synthesized from the M powders; however, the TiC content was always &gt;18 wt% in the MA samples. Further sintering of the M powder showed that the purity of Ti3SiC2 could be improved to &gt;97 wt% at 1250°–1300°C, which is ∼200°–300°C lower than that of sintered Ti/Si/C and Ti/SiC/C powders using the hot isostatic pressing (HIPing) technique. The microstructure of Ti3SiC2 also could be controlled using three types of powders, i.e., fine, coarse, or duplex‐grained, within the sintering temperature range. In comparison with Ti/Si/C and Ti/SiC/C mixture powders, it has been suggested that high‐purity Ti3SiC2 could be rapidly synthesized by sintering the Ti/Si/TiC powder mixture at relatively lower temperature using the PDS technique.</abstract><cop>Westerville, Ohio</cop><pub>American Ceramics Society</pub><doi>10.1111/j.1151-2916.2003.tb03317.x</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0002-7820
ispartof Journal of the American Ceramic Society, 2003-03, Vol.86 (3), p.431-436
issn 0002-7820
1551-2916
language eng
recordid cdi_proquest_miscellaneous_27856240
source Wiley-Blackwell Read & Publish Collection
subjects carbides
silicon
sinter/sintering
titanium
title Fabrication and Microstructure Characterization of Ti3SiC2 Synthesized from Ti/Si/2TiC Powders Using the Pulse Discharge Sintering (PDS) Technique
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T15%3A08%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_wiley&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fabrication%20and%20Microstructure%20Characterization%20of%20Ti3SiC2%20Synthesized%20from%20Ti/Si/2TiC%20Powders%20Using%20the%20Pulse%20Discharge%20Sintering%20(PDS)%20Technique&rft.jtitle=Journal%20of%20the%20American%20Ceramic%20Society&rft.au=Zhang,%20Zhe-Feng&rft.date=2003-03&rft.volume=86&rft.issue=3&rft.spage=431&rft.epage=436&rft.pages=431-436&rft.issn=0002-7820&rft.eissn=1551-2916&rft_id=info:doi/10.1111/j.1151-2916.2003.tb03317.x&rft_dat=%3Cproquest_wiley%3E27854213%3C/proquest_wiley%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i4061-91d506c00a1068169bf3d321cd8f046f77d910aaaebe7f3ecfcf20c5003b66123%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27854198&rft_id=info:pmid/&rfr_iscdi=true