Determination of nitrogen in silicon carbide by secondary ion mass spectrometry

The importance of silicon carbide (SiC) as a semiconductor material continues to increase. Nitrogen is the most popular donor impurity in this material. The determination of nitrogen by the secondary ion mass spectrometry (SIMS) method is a difficult task because direct monitoring of N ± ions suffer...

Full description

Saved in:
Bibliographic Details
Published in:Applied surface science 2003-01, Vol.203, p.184-188
Main Authors: Ya Ber, B, Kazantsev, D.Yu, Kovarsky, A.P, Yafaev, R.R
Format: Article
Language:English
Subjects:
Complex ions
HMR
N in SiC
SIMS
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The importance of silicon carbide (SiC) as a semiconductor material continues to increase. Nitrogen is the most popular donor impurity in this material. The determination of nitrogen by the secondary ion mass spectrometry (SIMS) method is a difficult task because direct monitoring of N ± ions suffers from a small ion yield. We investigated the complex nitrogen-matrix ion emission of C n N ± and Si n N ± ( n=1,2,3) type to obtain the low detection limit of nitrogen. The oxygen primary beam was used to determine the positive ion yield and cesium primary beam for the negative ions. The maximum ion yield of CN − ions under Cs primary beam was demonstrated. A nitrogen detection limit equal to (1±1)E+16 cm −3 was obtained by high mass resolution (∼7200) to separate 26( 12 C 14 N) − from 13 C 2 − analytical signals.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(02)00732-8