Fabrication of cobalt silicide nanowire contacts to silicon nanowires

• Published in: Journal of the Electrochemical Society 2003-09, Vol.150 (9), p.G577-G580
• Main Authors: MOHAMMAD, Ahmad M, DEY, Soham, LEW, K.-K, REDWING, J. M, MOHNEY, S. E
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Electronics; Exact sciences and technology; Molecular electronics, nanoelectronics; Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
• ISSN: 0013-4651; 1945-7111
• DOI: 10.1149/1.1598966

A novel method to fabricate cobalt silicide nanowire contacts to silicon nanowires is described. Nanoporous anodized alumina membranes were used to define the wires' dimensions. Cobalt was deposited electrochemically within the pores of the membranes. On top of the cobalt, gold was deposited electrochemically to catalyze the growth of the silicon nanowires. The well-known vapor-liquid-solid mechanism was used to grow the silicon nanowires. During the growth of silicon, cobalt reacts with the growing silicon nanowire, forming cobalt silicide, and under certain conditions, all of the Au used to catalyze the growth of the silicon nanowire travels along the tip of the growing wire, away from the cobalt silicide/Si interface. We also discuss the influence of the amount of Au catalyst on the structural quality of the wires.