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Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
Spiral growth by CVD on 6H-SiC (0001) has been investigated by AFM. The C-to-Si (C/Si) ratio for CVD affects the shape of spiral hillocks. The change in shape originates from the change in the relative rates of spiral growth and step-flow growth: a high C/Si ratio enhances spiral growth, while a low...
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Published in: | Japanese Journal of Applied Physics 2003-07, Vol.42 (Part 2, No. 7B), p.L846-L848 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Citations: | Items that cite this one |
Online Access: | Get full text |
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Summary: | Spiral growth by CVD on 6H-SiC (0001) has been investigated by AFM. The C-to-Si (C/Si) ratio for CVD affects the shape of spiral hillocks. The change in shape originates from the change in the relative rates of spiral growth and step-flow growth: a high C/Si ratio enhances spiral growth, while a low C/Si ratio enhances step-flow growth. 12 refs. |
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ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.42.L846 |