Effect of crystallinity on the dielectric loss of sputter-deposited (Ba,Sr)TiO3 thin films in the microwave range

The crystallinity dependence of the microwave dielectric losses in (Ba,Sr)TiO3 thin films was investigated. The sputter-deposition temperatures were altered to vary the level of thin-film crystallinity on a Pt/Si substrate. The dielectric losses (tan δ) were measured up to 6 GHz without parasitic (s...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials research 2003-03, Vol.18 (3), p.682-686
Main Authors: Kim, Tae-Gon, Oh, Jeongmin, Moon, Taeho, Kim, Yongjo, Park, Byungwoo, Lee, Young-Taek, Nam, Sangwook
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 686
container_issue 3
container_start_page 682
container_title Journal of materials research
container_volume 18
creator Kim, Tae-Gon
Oh, Jeongmin
Moon, Taeho
Kim, Yongjo
Park, Byungwoo
Lee, Young-Taek
Nam, Sangwook
description The crystallinity dependence of the microwave dielectric losses in (Ba,Sr)TiO3 thin films was investigated. The sputter-deposition temperatures were altered to vary the level of thin-film crystallinity on a Pt/Si substrate. The dielectric losses (tan δ) were measured up to 6 GHz without parasitic (stray) effects by using a circular-patch capacitor geometry and an equivalent-circuit model. The microwave dielectric losses increased from 0.0024 ± 0.0018 to 0.0102 ± 0.0017 with increasing crystallinity. These deteriorated dielectric losses showed a good correlation with the symmetry-breaking defects, as confirmed by Raman spectra at approximately 760 cm−1, inducing microscopic polar regions above the Curie temperature of the bulk (Ba0.43Sr0.57)TiO3.
doi_str_mv 10.1557/JMR.2003.0091
format article
fullrecord <record><control><sourceid>proquest_istex</sourceid><recordid>TN_cdi_proquest_miscellaneous_27864636</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cupid>10_1557_JMR_2003_0091</cupid><sourcerecordid>27864636</sourcerecordid><originalsourceid>FETCH-LOGICAL-c262t-35199562d4d2705972c502bcfab6054a6edf2bfd41d4fba554c5da970c6643dc3</originalsourceid><addsrcrecordid>eNotkclOwzAURS0EEmVYsvcKgURax1OaJa2gBRUQUNhajgcwZMJ2gP49qcLqLt55V7o6AJykaJwylk1u757GGCEyRihPd8AII0oTRjDfBSM0ndIE5yndBwchfCCUMpTREfi6staoCBsLld-EKMvS1S5uYFPD-G6gdqbs794pWDYhbLnQdjEan2jTNsFFo-HZTF48-_O1eyD9k6uhdWUVoBsqKqd88yO_DfSyfjNHYM_KMpjj_zwEL9dX6_kyWT0sbuaXq0RhjmNCWJrnjGNNNc4QyzOsGMKFsrLgiFHJjba4sJqmmtpCMkYV0zLPkOKcEq3IITgdelvffHUmRFG5oExZyto0XRA4m3LKCe_BZABdiOZXtN5V0m-E9J-CZyRjgi8eBV5cr-9flzPx2POTgVeyKrzTb0Z8NJ2v-zEiRWKrQvQqxFaF2Kogf4PZe_U</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27864636</pqid></control><display><type>article</type><title>Effect of crystallinity on the dielectric loss of sputter-deposited (Ba,Sr)TiO3 thin films in the microwave range</title><source>Springer Nature</source><creator>Kim, Tae-Gon ; Oh, Jeongmin ; Moon, Taeho ; Kim, Yongjo ; Park, Byungwoo ; Lee, Young-Taek ; Nam, Sangwook</creator><creatorcontrib>Kim, Tae-Gon ; Oh, Jeongmin ; Moon, Taeho ; Kim, Yongjo ; Park, Byungwoo ; Lee, Young-Taek ; Nam, Sangwook</creatorcontrib><description>The crystallinity dependence of the microwave dielectric losses in (Ba,Sr)TiO3 thin films was investigated. The sputter-deposition temperatures were altered to vary the level of thin-film crystallinity on a Pt/Si substrate. The dielectric losses (tan δ) were measured up to 6 GHz without parasitic (stray) effects by using a circular-patch capacitor geometry and an equivalent-circuit model. The microwave dielectric losses increased from 0.0024 ± 0.0018 to 0.0102 ± 0.0017 with increasing crystallinity. These deteriorated dielectric losses showed a good correlation with the symmetry-breaking defects, as confirmed by Raman spectra at approximately 760 cm−1, inducing microscopic polar regions above the Curie temperature of the bulk (Ba0.43Sr0.57)TiO3.</description><identifier>ISSN: 0884-2914</identifier><identifier>EISSN: 2044-5326</identifier><identifier>DOI: 10.1557/JMR.2003.0091</identifier><language>eng</language><publisher>New York, USA: Cambridge University Press</publisher><ispartof>Journal of materials research, 2003-03, Vol.18 (3), p.682-686</ispartof><rights>Copyright © Materials Research Society 2003</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Kim, Tae-Gon</creatorcontrib><creatorcontrib>Oh, Jeongmin</creatorcontrib><creatorcontrib>Moon, Taeho</creatorcontrib><creatorcontrib>Kim, Yongjo</creatorcontrib><creatorcontrib>Park, Byungwoo</creatorcontrib><creatorcontrib>Lee, Young-Taek</creatorcontrib><creatorcontrib>Nam, Sangwook</creatorcontrib><title>Effect of crystallinity on the dielectric loss of sputter-deposited (Ba,Sr)TiO3 thin films in the microwave range</title><title>Journal of materials research</title><addtitle>J. Mater. Res</addtitle><description>The crystallinity dependence of the microwave dielectric losses in (Ba,Sr)TiO3 thin films was investigated. The sputter-deposition temperatures were altered to vary the level of thin-film crystallinity on a Pt/Si substrate. The dielectric losses (tan δ) were measured up to 6 GHz without parasitic (stray) effects by using a circular-patch capacitor geometry and an equivalent-circuit model. The microwave dielectric losses increased from 0.0024 ± 0.0018 to 0.0102 ± 0.0017 with increasing crystallinity. These deteriorated dielectric losses showed a good correlation with the symmetry-breaking defects, as confirmed by Raman spectra at approximately 760 cm−1, inducing microscopic polar regions above the Curie temperature of the bulk (Ba0.43Sr0.57)TiO3.</description><issn>0884-2914</issn><issn>2044-5326</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotkclOwzAURS0EEmVYsvcKgURax1OaJa2gBRUQUNhajgcwZMJ2gP49qcLqLt55V7o6AJykaJwylk1u757GGCEyRihPd8AII0oTRjDfBSM0ndIE5yndBwchfCCUMpTREfi6staoCBsLld-EKMvS1S5uYFPD-G6gdqbs794pWDYhbLnQdjEan2jTNsFFo-HZTF48-_O1eyD9k6uhdWUVoBsqKqd88yO_DfSyfjNHYM_KMpjj_zwEL9dX6_kyWT0sbuaXq0RhjmNCWJrnjGNNNc4QyzOsGMKFsrLgiFHJjba4sJqmmtpCMkYV0zLPkOKcEq3IITgdelvffHUmRFG5oExZyto0XRA4m3LKCe_BZABdiOZXtN5V0m-E9J-CZyRjgi8eBV5cr-9flzPx2POTgVeyKrzTb0Z8NJ2v-zEiRWKrQvQqxFaF2Kogf4PZe_U</recordid><startdate>20030301</startdate><enddate>20030301</enddate><creator>Kim, Tae-Gon</creator><creator>Oh, Jeongmin</creator><creator>Moon, Taeho</creator><creator>Kim, Yongjo</creator><creator>Park, Byungwoo</creator><creator>Lee, Young-Taek</creator><creator>Nam, Sangwook</creator><general>Cambridge University Press</general><scope>BSCLL</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20030301</creationdate><title>Effect of crystallinity on the dielectric loss of sputter-deposited (Ba,Sr)TiO3 thin films in the microwave range</title><author>Kim, Tae-Gon ; Oh, Jeongmin ; Moon, Taeho ; Kim, Yongjo ; Park, Byungwoo ; Lee, Young-Taek ; Nam, Sangwook</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c262t-35199562d4d2705972c502bcfab6054a6edf2bfd41d4fba554c5da970c6643dc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Tae-Gon</creatorcontrib><creatorcontrib>Oh, Jeongmin</creatorcontrib><creatorcontrib>Moon, Taeho</creatorcontrib><creatorcontrib>Kim, Yongjo</creatorcontrib><creatorcontrib>Park, Byungwoo</creatorcontrib><creatorcontrib>Lee, Young-Taek</creatorcontrib><creatorcontrib>Nam, Sangwook</creatorcontrib><collection>Istex</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Tae-Gon</au><au>Oh, Jeongmin</au><au>Moon, Taeho</au><au>Kim, Yongjo</au><au>Park, Byungwoo</au><au>Lee, Young-Taek</au><au>Nam, Sangwook</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of crystallinity on the dielectric loss of sputter-deposited (Ba,Sr)TiO3 thin films in the microwave range</atitle><jtitle>Journal of materials research</jtitle><addtitle>J. Mater. Res</addtitle><date>2003-03-01</date><risdate>2003</risdate><volume>18</volume><issue>3</issue><spage>682</spage><epage>686</epage><pages>682-686</pages><issn>0884-2914</issn><eissn>2044-5326</eissn><abstract>The crystallinity dependence of the microwave dielectric losses in (Ba,Sr)TiO3 thin films was investigated. The sputter-deposition temperatures were altered to vary the level of thin-film crystallinity on a Pt/Si substrate. The dielectric losses (tan δ) were measured up to 6 GHz without parasitic (stray) effects by using a circular-patch capacitor geometry and an equivalent-circuit model. The microwave dielectric losses increased from 0.0024 ± 0.0018 to 0.0102 ± 0.0017 with increasing crystallinity. These deteriorated dielectric losses showed a good correlation with the symmetry-breaking defects, as confirmed by Raman spectra at approximately 760 cm−1, inducing microscopic polar regions above the Curie temperature of the bulk (Ba0.43Sr0.57)TiO3.</abstract><cop>New York, USA</cop><pub>Cambridge University Press</pub><doi>10.1557/JMR.2003.0091</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0884-2914
ispartof Journal of materials research, 2003-03, Vol.18 (3), p.682-686
issn 0884-2914
2044-5326
language eng
recordid cdi_proquest_miscellaneous_27864636
source Springer Nature
title Effect of crystallinity on the dielectric loss of sputter-deposited (Ba,Sr)TiO3 thin films in the microwave range
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T15%3A29%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_istex&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20crystallinity%20on%20the%20dielectric%20loss%20of%20sputter-deposited%20(Ba,Sr)TiO3%20thin%20films%20in%20the%20microwave%20range&rft.jtitle=Journal%20of%20materials%20research&rft.au=Kim,%20Tae-Gon&rft.date=2003-03-01&rft.volume=18&rft.issue=3&rft.spage=682&rft.epage=686&rft.pages=682-686&rft.issn=0884-2914&rft.eissn=2044-5326&rft_id=info:doi/10.1557/JMR.2003.0091&rft_dat=%3Cproquest_istex%3E27864636%3C/proquest_istex%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c262t-35199562d4d2705972c502bcfab6054a6edf2bfd41d4fba554c5da970c6643dc3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27864636&rft_id=info:pmid/&rft_cupid=10_1557_JMR_2003_0091&rfr_iscdi=true