Effects of Growth Rate on Lateral Compositional Modulation of InGaAsP/InP(001) Grown by Metalorganic Molecular Beam Epitaxy

In1-xGaxAs0.85P0.15 (0.35 = x = 0.45) epitaxial layers having a composition lying within the miscibility gap and with strain ranging from -0.5% (tension) to +0.3% (compression) were grown on InP (001) substrates using metalorganic MBE (MOMBE) at growth rates of 0.25 and 0.46 nm/s. Double crystal pow...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 10), p.6269-6275
Main Author: Ogasawara, Matsuyuki
Format: Article
Language:English
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Summary:In1-xGaxAs0.85P0.15 (0.35 = x = 0.45) epitaxial layers having a composition lying within the miscibility gap and with strain ranging from -0.5% (tension) to +0.3% (compression) were grown on InP (001) substrates using metalorganic MBE (MOMBE) at growth rates of 0.25 and 0.46 nm/s. Double crystal powder XRD (DCXRD) was mainly used to characterize the structural properties of lateral compositional modulation (LCM). Asymmetric (224) rocking scans show that the modulation period of the LCM is approximately 100 nm and that the amplitudes of the LCM for 0.46 nm/s samples are smaller than those for 0.25 nm/s ones in the entire composition range. Cross-sectional TEM and photoluminescence measurements were also performed for the same samples. Each of these investigations indicates that increasing the growth rate reduces the LCM. 22 refs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.42.6269