Far-infrared properties of sol-gel derived PbZr(0.52)Ti(0.48)O3 thin films on Pt-coated substrates

Polycrystalline tetragonal PZT thin films have been deposited on the nickel and (111) platinum coated (110) sapphire substrates by the sol-gel method. Optical properties of the PZT thin films were studied using far-infrared reflectivity spectroscopy in the 200-10,000/cm frequency range at 300 K. The...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2003-02, Vol.36 (3), p.266-269
Main Authors: Kafadaryan, E A, Hovsepyan, R K, Khachaturova, A A, Aghamalyan, N R, Shirinyan, G O, Manukyan, A L, Vardanyan, R S, Hayrapetyan, A G, Grigoryan, S G, Vardanyan, E S
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Polycrystalline tetragonal PZT thin films have been deposited on the nickel and (111) platinum coated (110) sapphire substrates by the sol-gel method. Optical properties of the PZT thin films were studied using far-infrared reflectivity spectroscopy in the 200-10,000/cm frequency range at 300 K. The frequency dependence of the optical characteristics (sigma, epsilon, -Im/epsilon of the films were calculated by the Kramers-Kronig transformation of the reflectivity spectra and analyzed by the Drude-Lorentz model. The frequency dependence of the optical conductivity, sigma(omega), of the PZT films deposited on platinum coated sapphire is well described by the free-carrier term and an overdamped mid-infrared component. Sapphire/Pt/PZT structures reveal semiconductor properties (effective carrier concentration N/m* is up to 10 exp 20/cu cm, and plasma minimum is located near 3000/cm). This effect can be related to the favorable influence of the platinum electrode on the charge carrier density at Pt/PZT contact and formation of the interfacial conductive layer.
ISSN:0022-3727