Effects of ammonia gas on threshold pressure and seed growth for bulk GaN single crystals by Na flux method

We investigated the threshold pressure necessary for heterogeneous nucleation of GaN using pure nitrogen gas and nitrogen gas mixed with ammonia in the Na-flux method. In our investigation, we found the appropriate pressure region for nucleating GaN and growing GaN seed crystals without additional h...

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Bibliographic Details
Published in:Journal of crystal growth 2003-06, Vol.253 (1), p.1-5
Main Authors: Iwahashi, Tomoya, Kawamura, Fumio, Morishita, Masanori, Kai, Yasunori, Yoshimura, Masashi, Mori, Yusuke, Sasaki, Takatomo
Format: Article
Language:English
Subjects:
A1. Single crystal growth
A2. Growth from melt
B1. Nitrides
B2. Semiconducting III–V materials
B3. Laser diodes
B3. Light emitting diodes
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth from solutions
Materials science
Methods of crystal growth
physics of crystal growth
Physics
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Summary:We investigated the threshold pressure necessary for heterogeneous nucleation of GaN using pure nitrogen gas and nitrogen gas mixed with ammonia in the Na-flux method. In our investigation, we found the appropriate pressure region for nucleating GaN and growing GaN seed crystals without additional heterogeneous nucleation. This study revealed that the threshold pressure to nucleate GaN decreases as the ratio of ammonia increases. We also succeeded in reducing the nucleation threshold pressure from 30 to 10 atm by using nitrogen gas with 25–40% ammonia gas instead of pure nitrogen gas. We confirmed that seed growth without additional nucleation is possible in both pure nitrogen and nitrogen gas mixed with ammonia at pressures below those required for nucleation.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(03)00900-X