Field Effect Assisted Thermally Stimulated Currents In CdS Thin Films Deposited ON SiO(2)/Si Substrates

Field effect assisted Thermally Stimulated Currents (TSC) measurements were used to differentiate between electron and hole traps in CdS thin films deposited on SiO(2)/Si substrate. The electrode configuration was designed as for a pseudo-MOS structure, with drain and source contacts on the CdS film...

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Bibliographic Details
Published in:Journal of Optoelectronics and Advanced Materials 2003-12, Vol.5 (4), p.849-852
Main Authors: Lisca, M, Pentia, E, Sarau, G, Pintilie, L, Pintilie, I, Botila, T
Format: Article
Language:English
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Summary:Field effect assisted Thermally Stimulated Currents (TSC) measurements were used to differentiate between electron and hole traps in CdS thin films deposited on SiO(2)/Si substrate. The electrode configuration was designed as for a pseudo-MOS structure, with drain and source contacts on the CdS film surface and using the Si substrate as gate electrode. Electron or hole traps will be favored to fill-up depending on the polarity of the gate voltage applied during illumination at low temperatures. Collection of the thermally released electrons or holes in the drain circuit will depend also on the polarity of the gate voltage applied during heating at constant rate. Comparing the results with those obtained in case of CdS films deposited on glass, it is possible to differentiate between Si(2)/ CdS interface traps and bulk CdS ones.
ISSN:1454-4164