Uniformity of 4H–SiC epitaxial layers grown on 3-in diameter substrates

• Published in: Journal of crystal growth 2003-10, Vol.258 (1), p.113-122
• Main Authors: Nishio, Johji, Hasegawa, Mitsuru, Kojima, Kazutoshi, Ohno, Toshiyuki, Ishida, Yuuki, Takahashi, Tetsuo, Suzuki, Takaya, Tanaka, Tomoyuki, Arai, Kazuo
• Format: Article
• Language: English
• Subjects: A1. Doping; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; A3. Vapor phase epitaxy; B2. Semiconducting silicon compounds; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Low-field transport and mobility; piezoresistance; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(03)01498-2

Uniformity of thickness and carrier concentration of homo-epitaxial films grown on 3-in diameter 4H–SiC substrates using a horizontal hot-wall reactor has been investigated. From the comparison between the experimental results and temperature and gas flow simulation, it is found that the thickness (growth rate) distribution is closely related to the gas velocity distribution, and the carrier concentration distribution has strong correlation with the temperature distribution not on the surface of the susceptor plate but in the gas phase. It is pointed out that the growth rate uniformity of 3-in diameter wafer is degraded by the gas flow disturbance near the susceptor’s side walls, and the carrier concentration uniformity is strongly related to the gas phase reaction of nitrogen containing species, such as N 2 and/or others.