Field-Shield Trench Isolation with Self-Aligned Field Oxide

A novel fabrication technique for submicrometer trench isolation is proposed. This features a P-doped polysilicon field shield filled into the trench and a thick isolation oxide formed on polysilicon by impurity-enhanced oxidation (IEO). Due to the oxide entirely covering the trench shoulder by a se...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 4B), p.2100-2105
Main Authors: Takase, Akihiro, Kidera, Toshirou, Sunami, Hideo
Format: Article
Language:English
Online Access:Get full text
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Summary:A novel fabrication technique for submicrometer trench isolation is proposed. This features a P-doped polysilicon field shield filled into the trench and a thick isolation oxide formed on polysilicon by impurity-enhanced oxidation (IEO). Due to the oxide entirely covering the trench shoulder by a self-aligned process, the proposed structure has notable merits: (i) the anomalous hump current in Id-Vg subthreshold characteristics is suppressed even in a narrow-channel transistor and (ii) the proposed structure provides less susceptibility to crystal defect generation. These can facilitate fabrication of controllable devices. In addition, a deeply implanted channel stopper yields a low parasitic capacitance for fast device operation and excellent isolation performance characteristics such as low field penetration and low punch-through current. These are attributed to the effect of the electric field shield. 5 refs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.42.2100