Influence of contamination on the electrical activity of crystal defects in silicon

It is shown by EBIC that dislocation activity is controlled by the degree of metal contamination. The activity can be affected by external gettering and hydrogenation. DLTS investigations showed that the occurrence and features of the dislocation-related C1 line also depend on the amount of contamin...

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Bibliographic Details
Published in:Microelectronic engineering 2003-04, Vol.66 (1), p.281-288
Main Authors: Kittler, Martin, Seifert, Winfried, Knobloch, Klaus
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Dislocations
Electrical activity
Electron states
Exact sciences and technology
Gettering
Impurity and defect levels
Linear defects: dislocations, disclinations
Passivation
Physics
Silicon
Structure of solids and liquids
crystallography
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Summary:It is shown by EBIC that dislocation activity is controlled by the degree of metal contamination. The activity can be affected by external gettering and hydrogenation. DLTS investigations showed that the occurrence and features of the dislocation-related C1 line also depend on the amount of contamination. In small amounts, the impurities are believed to be tightly bonded to the dislocation core, resulting in a rather sharp energetic distribution of levels of the C1 line. At larger concentrations, the impurities are accommodated as a cloud in the dislocation strain field, giving rise to a broad energetic distribution of levels of C1. It is suggested that only impurity atoms in the cloud can be removed by external gettering and/or passivated by hydrogenation.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00919-X