Formation of p-type ZnO film on InP substrate by phosphor doping

• Published in: Applied surface science 2003-04, Vol.210 (3), p.177-182
• Main Authors: Bang, Kyu-Hyun, Hwang, Deuk-Kyu, Park, Min-Chul, Ko, Young-Don, Yun, Ilgu, Myoung, Jae-Min
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Diffusion; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Homojunction; Ii-vi semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; rf magnetron sputtering; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; ZnO
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(03)00151-X

ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn 3P 2 was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn 3P 2 diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.