Far IR magnetoabsorption in Ge/GeSi multiple-quantum-well heterostructures

Shallow acceptor-related absorption lines have been discovered in the far IR magnetoabsorption spectra in strained Ge/GeSi multiple-quantum-well heterostructures under band-gap photoexcitation at T=4.2K. The lines are referred to as optical transitions between shallow acceptor states bound with two...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2003-12, Vol.340-342, p.840-843
Main Authors: Aleshkin, V.Ya, Erofeeva, I.V., Gavrilenko, V.I., Ikonnikov, A.V., Kozlov, D.V., Kuznetsov, O.A., Veksler, D.B.
Format: Article
Language:English
Subjects:
Far infrared range
Magnetoabsorption
Quantum wells
Shallow acceptors
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Summary:Shallow acceptor-related absorption lines have been discovered in the far IR magnetoabsorption spectra in strained Ge/GeSi multiple-quantum-well heterostructures under band-gap photoexcitation at T=4.2K. The lines are referred to as optical transitions between shallow acceptor states bound with two pairs of two-dimensional hole Landau levels.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2003.09.221