Growth of ZnO Nanorods on A-Plane (11\bar20) Sapphire by Metal-Organic Vapor Phase Epitaxy

The growth mode of ZnO on a-plane (11-20) sapphire in MOVPE exhibited stronger tendency toward 3-D nucleation at lower temperature (less than or equal to 700 C) and toward 2-D layered growth at higher temperature (900 C), resulting in the formation of rods and films, resp. ZnO nanorods with diameter...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 5A), p.2600-2604
Main Authors: Maejima, Keigou, Ueda, Masaya, Fujita, Shizuo, Fujita, Shigeo
Format: Article
Language:English
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Summary:The growth mode of ZnO on a-plane (11-20) sapphire in MOVPE exhibited stronger tendency toward 3-D nucleation at lower temperature (less than or equal to 700 C) and toward 2-D layered growth at higher temperature (900 C), resulting in the formation of rods and films, resp. ZnO nanorods with diameters smaller than 10 nm were fabricated at the appropriate precursor flow rate and growth temperature. Blue shift of emission from free excitons in a photoluminescence spectrum was observed for the nanorods, particularly for those grown at 400 C. Because the diameters of those nanorods were sufficiently small for quantum confinement, the blue shift was attributed to quantum size effects. 18 refs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.42.2600