GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

For the first time, a III-V compound semiconductor MOSFET with the gate dielectric grown by atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on III-V compound semiconductors affords tremendous functionality and opportunity by enabling the formation of high-qual...

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Bibliographic Details
Published in:IEEE electron device letters 2003-04, Vol.24 (4), p.209-211
Main Authors: Ye, P.D., Wilk, G.D., Kwo, J., Yang, B., Gossmann, H.-J.L., Frei, M., Chu, S.N.G., Mannaerts, J.P., Sergent, M., Hong, M., Ng, K.K., Bude, J.
Format: Article
Language:English
Subjects:
Atomic layer deposition
Cutoff frequency
Deposition
Devices
Dielectrics
Gallium arsenide
Gallium arsenides
Gates
III-V semiconductor materials
Leakage current
MOSFET circuits
MOSFETs
Oxides
Passivation
Semiconductor devices
Semiconductors
Transconductance
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Summary:For the first time, a III-V compound semiconductor MOSFET with the gate dielectric grown by atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on III-V compound semiconductors affords tremendous functionality and opportunity by enabling the formation of high-quality gate oxides and passivation layers on III-V compound semiconductor devices. A 0.65-μm gate-length depletion-mode n-channel GaAs MOSFET with an Al 2 O 3 gate oxide thickness of 160 /spl Aring/ shows a gate leakage current density less than 10/sup -4/ A/cm 2 and a maximum transconductance of 130 mS/mm, with negligible drain current drift and hysteresis. A short-circuit current-gain cut-off frequency f T of 14.0 GHz and a maximum oscillation frequency f max of 25.2 GHz have been achieved from a 0.65-μm gate-length device.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2003.812144