HgCdTe on Si: Present status and novel buffer layer concepts

Authors discuss buffer-layer concepts for the synthesis of low defect-density HgCdTe epilayers on Si for both hybrid and monolithically integrated, ir focal plane arrays (IRFPAa). The primary technical problems to overcome include the 19% lattice-parameter mismatch between HgCdTe and Si, and the (21...

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Bibliographic Details
Published in:Journal of electronic materials 2003-08, Vol.32 (8), p.882-889
Main Authors: GOLDING, T. D, HOLLAND, O. W, KIM, M. J, DINAN, J. H, ALMEIDA, L. A, ARIAS, J. M, BAJAJ, J, SHIH, H. D, KIRK, W. P
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Imaging devices
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Authors discuss buffer-layer concepts for the synthesis of low defect-density HgCdTe epilayers on Si for both hybrid and monolithically integrated, ir focal plane arrays (IRFPAa). The primary technical problems to overcome include the 19% lattice-parameter mismatch between HgCdTe and Si, and the (211)B surface orientation required for MBE, the growth technique of choice for HgCdTe. Authors provide a general overview of IRFPAs, motivations for realizing HgCdTe on Si, the current state-of-the-art parameters as a baseline, and three novel buffer-layer concepts and technologies based on (1) obedient GeSi films on SiO2, (2) wafer bonding, and (3) chalcogenides. 28 refs.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-003-0205-0