On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector

• Published in: Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 10), p.6319-6322
• Main Authors: Kuei, Ping-Yu, Hsieh, Li-Zen, Chang, Liann-Be, Jeng, Ming-Jer, Lin, Ray-Ming
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.42.6319

Authors investigated the influence of ion implantation and post-implantation rapid thermal anneal (RTA) on the reflectivity spectrum of an AlGaAs distributed Bragg reflector (DBR). The peak wavelength of the reflectivity spectrum shifts toward longer wavelengths and the background reflectance increases after ion implantation. The calculated spectrum agrees well with the experimental observation. It can be used to understand the mechanisms of ion implantation on the reflectivity spectra. Four different ions (H+, O+, Si+ and P+) were implanted into DBR for comparison. Among these samples, the Si-implanted DBR has the largest amount of red-shift, and the H-implanted DBR are almost the same as unimplanted. In addition, post-implantation RTA would shift the reflectivity band back to its original position and lead to the recovery of the background reflectance, but degrade peak reflectance. 10 refs.