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High-Quality AlN by Initial Layer-by-Layer Growth on Surface-Controlled 4H-SiC(0001) Substrate

The initial layer-by-layer growth of AlN was realized on a surface-controlled 4H-SiC(0001) substrate using plasma-assisted MBE (PA-MBE). To achieve initial 2-D growth, the control of SiC surface chemistry is important as well as that of surface flatness. The effect of SiC preparation on the surface...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2003-05, Vol.42 (Part 2, No. 5A), p.L445-L447
Main Authors: Onojima, Norio, Suda, Jun, Matsunami, Hiroyuki
Format: Article
Language:English
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Summary:The initial layer-by-layer growth of AlN was realized on a surface-controlled 4H-SiC(0001) substrate using plasma-assisted MBE (PA-MBE). To achieve initial 2-D growth, the control of SiC surface chemistry is important as well as that of surface flatness. The effect of SiC preparation on the surface structure and chemical composition was investigated by using RHEED and in situ XPS. The initial growth mode of AlN was influenced by the removal of residual O atoms from the SiC surface. Symmetrical and asymmetrical X-ray rocking curve measurements revealed that initial 2-D growth was essential to obtain the excellent crystalline quality of AlN layer. 12 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.42.L445