On the optical properties of amorphous Ge–Ga–Se films prepared by pulsed laser deposition

Amorphous Ge-Ga-Se thin films (pure and dysprosium doped) were prepared by the pulsed laser deposition technique using different energy of the laser beam pulses. The effects of exposure and thermal annealing below the glass transition temperature on the optical parameters (index of refraction, optic...

Full description

Saved in:
Bibliographic Details
Published in:Journal of non-crystalline solids 2003-10, Vol.326-327 (Complete), p.53-57
Main Authors: Němec, P., Jedelský, J., Frumar, M., Munzar, M., Jelínek, M., Lančok, J.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c313t-7edef88b69fb10f8fea65f3379ca9f93469e1a875ebd8e354592f0bd384ea01b3
cites cdi_FETCH-LOGICAL-c313t-7edef88b69fb10f8fea65f3379ca9f93469e1a875ebd8e354592f0bd384ea01b3
container_end_page 57
container_issue Complete
container_start_page 53
container_title Journal of non-crystalline solids
container_volume 326-327
creator Němec, P.
Jedelský, J.
Frumar, M.
Munzar, M.
Jelínek, M.
Lančok, J.
description Amorphous Ge-Ga-Se thin films (pure and dysprosium doped) were prepared by the pulsed laser deposition technique using different energy of the laser beam pulses. The effects of exposure and thermal annealing below the glass transition temperature on the optical parameters (index of refraction, optical band gap) and the thickness of as-deposited chalcogenide thin films were studied. The optical band gap and the thickness of the thin films increased with exposure of the films and even more with the annealing. Index of refraction has an opposite tendency. Two emission bands with maxima near 1140 and 1340 nm corresponding to 6F9/2, 6H7 /2-6H15/2 and 6F11/2, 6H9/2-6H15/2 electron transitions of Dy3+ ions were identified in luminescence spectra of dysprosium doped thin films.
doi_str_mv 10.1016/S0022-3093(03)00376-4
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27904801</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27899450</sourcerecordid><originalsourceid>FETCH-LOGICAL-c313t-7edef88b69fb10f8fea65f3379ca9f93469e1a875ebd8e354592f0bd384ea01b3</originalsourceid><addsrcrecordid>eNqNkM9KAzEQxnNQsFYfQchJ9LA62eyf5ChFq1DooXqUkN2d0MhuE5PtoTffwTf0SUyteHYYZoaZH8PHR8gFgxsGrLpdAeR5xkHyK-DXALyusuKITP7WJ-Q0xjdIUXMxIa_LDR3XSJ0fbat76oPzGEaLkTpD9eCCX7ttpHP8-vic61RWSI3th5hQ9DpgR5sd9ds-pqnXEQPt0LtoR-s2Z-TY6HQ5_-1T8vJw_zx7zBbL-dPsbpG1nPExq7FDI0RTSdMwMMKgrkrDeS1bLY3kRSWRaVGX2HQCeVmUMjfQdFwUqIE1fEouD3-T_PctxlENNrbY93qDSb3KawmFAPYPUEhZlJDA8gC2wcUY0Cgf7KDDTjFQe6fVj9Nqb6mClHunVcG_AZWEdm0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27899450</pqid></control><display><type>article</type><title>On the optical properties of amorphous Ge–Ga–Se films prepared by pulsed laser deposition</title><source>ScienceDirect Freedom Collection</source><creator>Němec, P. ; Jedelský, J. ; Frumar, M. ; Munzar, M. ; Jelínek, M. ; Lančok, J.</creator><creatorcontrib>Němec, P. ; Jedelský, J. ; Frumar, M. ; Munzar, M. ; Jelínek, M. ; Lančok, J.</creatorcontrib><description>Amorphous Ge-Ga-Se thin films (pure and dysprosium doped) were prepared by the pulsed laser deposition technique using different energy of the laser beam pulses. The effects of exposure and thermal annealing below the glass transition temperature on the optical parameters (index of refraction, optical band gap) and the thickness of as-deposited chalcogenide thin films were studied. The optical band gap and the thickness of the thin films increased with exposure of the films and even more with the annealing. Index of refraction has an opposite tendency. Two emission bands with maxima near 1140 and 1340 nm corresponding to 6F9/2, 6H7 /2-6H15/2 and 6F11/2, 6H9/2-6H15/2 electron transitions of Dy3+ ions were identified in luminescence spectra of dysprosium doped thin films.</description><identifier>ISSN: 0022-3093</identifier><identifier>DOI: 10.1016/S0022-3093(03)00376-4</identifier><language>eng</language><ispartof>Journal of non-crystalline solids, 2003-10, Vol.326-327 (Complete), p.53-57</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c313t-7edef88b69fb10f8fea65f3379ca9f93469e1a875ebd8e354592f0bd384ea01b3</citedby><cites>FETCH-LOGICAL-c313t-7edef88b69fb10f8fea65f3379ca9f93469e1a875ebd8e354592f0bd384ea01b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Němec, P.</creatorcontrib><creatorcontrib>Jedelský, J.</creatorcontrib><creatorcontrib>Frumar, M.</creatorcontrib><creatorcontrib>Munzar, M.</creatorcontrib><creatorcontrib>Jelínek, M.</creatorcontrib><creatorcontrib>Lančok, J.</creatorcontrib><title>On the optical properties of amorphous Ge–Ga–Se films prepared by pulsed laser deposition</title><title>Journal of non-crystalline solids</title><description>Amorphous Ge-Ga-Se thin films (pure and dysprosium doped) were prepared by the pulsed laser deposition technique using different energy of the laser beam pulses. The effects of exposure and thermal annealing below the glass transition temperature on the optical parameters (index of refraction, optical band gap) and the thickness of as-deposited chalcogenide thin films were studied. The optical band gap and the thickness of the thin films increased with exposure of the films and even more with the annealing. Index of refraction has an opposite tendency. Two emission bands with maxima near 1140 and 1340 nm corresponding to 6F9/2, 6H7 /2-6H15/2 and 6F11/2, 6H9/2-6H15/2 electron transitions of Dy3+ ions were identified in luminescence spectra of dysprosium doped thin films.</description><issn>0022-3093</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqNkM9KAzEQxnNQsFYfQchJ9LA62eyf5ChFq1DooXqUkN2d0MhuE5PtoTffwTf0SUyteHYYZoaZH8PHR8gFgxsGrLpdAeR5xkHyK-DXALyusuKITP7WJ-Q0xjdIUXMxIa_LDR3XSJ0fbat76oPzGEaLkTpD9eCCX7ttpHP8-vic61RWSI3th5hQ9DpgR5sd9ds-pqnXEQPt0LtoR-s2Z-TY6HQ5_-1T8vJw_zx7zBbL-dPsbpG1nPExq7FDI0RTSdMwMMKgrkrDeS1bLY3kRSWRaVGX2HQCeVmUMjfQdFwUqIE1fEouD3-T_PctxlENNrbY93qDSb3KawmFAPYPUEhZlJDA8gC2wcUY0Cgf7KDDTjFQe6fVj9Nqb6mClHunVcG_AZWEdm0</recordid><startdate>20031001</startdate><enddate>20031001</enddate><creator>Němec, P.</creator><creator>Jedelský, J.</creator><creator>Frumar, M.</creator><creator>Munzar, M.</creator><creator>Jelínek, M.</creator><creator>Lančok, J.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>JG9</scope></search><sort><creationdate>20031001</creationdate><title>On the optical properties of amorphous Ge–Ga–Se films prepared by pulsed laser deposition</title><author>Němec, P. ; Jedelský, J. ; Frumar, M. ; Munzar, M. ; Jelínek, M. ; Lančok, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c313t-7edef88b69fb10f8fea65f3379ca9f93469e1a875ebd8e354592f0bd384ea01b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Němec, P.</creatorcontrib><creatorcontrib>Jedelský, J.</creatorcontrib><creatorcontrib>Frumar, M.</creatorcontrib><creatorcontrib>Munzar, M.</creatorcontrib><creatorcontrib>Jelínek, M.</creatorcontrib><creatorcontrib>Lančok, J.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><jtitle>Journal of non-crystalline solids</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Němec, P.</au><au>Jedelský, J.</au><au>Frumar, M.</au><au>Munzar, M.</au><au>Jelínek, M.</au><au>Lančok, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the optical properties of amorphous Ge–Ga–Se films prepared by pulsed laser deposition</atitle><jtitle>Journal of non-crystalline solids</jtitle><date>2003-10-01</date><risdate>2003</risdate><volume>326-327</volume><issue>Complete</issue><spage>53</spage><epage>57</epage><pages>53-57</pages><issn>0022-3093</issn><abstract>Amorphous Ge-Ga-Se thin films (pure and dysprosium doped) were prepared by the pulsed laser deposition technique using different energy of the laser beam pulses. The effects of exposure and thermal annealing below the glass transition temperature on the optical parameters (index of refraction, optical band gap) and the thickness of as-deposited chalcogenide thin films were studied. The optical band gap and the thickness of the thin films increased with exposure of the films and even more with the annealing. Index of refraction has an opposite tendency. Two emission bands with maxima near 1140 and 1340 nm corresponding to 6F9/2, 6H7 /2-6H15/2 and 6F11/2, 6H9/2-6H15/2 electron transitions of Dy3+ ions were identified in luminescence spectra of dysprosium doped thin films.</abstract><doi>10.1016/S0022-3093(03)00376-4</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0022-3093
ispartof Journal of non-crystalline solids, 2003-10, Vol.326-327 (Complete), p.53-57
issn 0022-3093
language eng
recordid cdi_proquest_miscellaneous_27904801
source ScienceDirect Freedom Collection
title On the optical properties of amorphous Ge–Ga–Se films prepared by pulsed laser deposition
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T02%3A33%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=On%20the%20optical%20properties%20of%20amorphous%20Ge%E2%80%93Ga%E2%80%93Se%20films%20prepared%20by%20pulsed%20laser%20deposition&rft.jtitle=Journal%20of%20non-crystalline%20solids&rft.au=N%C4%9Bmec,%20P.&rft.date=2003-10-01&rft.volume=326-327&rft.issue=Complete&rft.spage=53&rft.epage=57&rft.pages=53-57&rft.issn=0022-3093&rft_id=info:doi/10.1016/S0022-3093(03)00376-4&rft_dat=%3Cproquest_cross%3E27899450%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c313t-7edef88b69fb10f8fea65f3379ca9f93469e1a875ebd8e354592f0bd384ea01b3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27899450&rft_id=info:pmid/&rfr_iscdi=true