Integrated process modeling and experimental validation of silicon carbide sublimation growth

A model that integrates heat and mass transfer, growth kinetics, anisotropic thermal stresses is developed to predict the global temperature distribution, growth rate and dislocation distribution. The simulated temperature and growth rate are compared with the experimental measurements. The time-dep...

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Bibliographic Details
Published in:Journal of crystal growth 2003-05, Vol.252 (4), p.523-537
Main Authors: Ma, R.-H., Zhang, H., Ha, S., Skowronski, M.
Format: Article
Language:English
Subjects:
A1. Growth models
A1. Line defects
A1. Mass transfer
A1. Stresses
A3. Growth from vapor
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth from vapor
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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Summary:A model that integrates heat and mass transfer, growth kinetics, anisotropic thermal stresses is developed to predict the global temperature distribution, growth rate and dislocation distribution. The simulated temperature and growth rate are compared with the experimental measurements. The time-depending growth process, e.g., the variations of the growth rate, the growth interface shape, and the thermal stresses with time in the growing crystal are studied using the integrated model. The resolved shear stress and the von Mises stress are used to predict the dislocation density. The effects of geometric configuration and design parameters on the growth of crystal are also discussed.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(03)00944-8