Growth of group II-VI semiconductor quantum dots with strong quantum confinement and low size dispersion

• Published in: Physica Status Solidi (b) 2003-11, Vol.240 (1), p.134-138
• Main Authors: Pandey, Praveen K., Sharma, Kriti, Nagpal, Swati, Bhatnagar, P. K., Mathur, P. C.
• Format: Article
• Language: English
• Subjects: 61.46.+w; 68.65.Hb; 71.55.Gs; 81.07.−b; Clusters, nanoparticles, and nanocrystalline materials; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals; Physics; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/pssb.200301868

CdTe quantum dots embedded in glass matrix are grown using two‐step annealing method. The results for the optical transmission characterization are analysed and compared with the results obtained from CdTe quantum dots grown using conventional single‐step annealing method. A theoretical model for the absorption spectra is used to quantitatively estimate the size dispersion in the two cases. In the present work, it is established that the quantum dots grown using two‐step annealing method have stronger quantum confinement, reduced size dispersion and higher volume ratio as compared to the single‐step annealed samples. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)