GROWTH AND CHARACTERIZATION OF Tl2S SINGLE CRYSTALS

Single crystals of the Tl2S compound were grown by a new crystal growth technique based on a modification of the traveling heater method technique. This growth was performed. Electrical conductivity, Hall effect and thermoelectric power measurements were carried out in the temperature range (200-575...

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Published in:Jpn.J.Appl.Phys ,Part 1. Vol. 42, no. 9A, pp. 5480-5484. 2003 Part 1. Vol. 42, no. 9A, pp. 5480-5484. 2003, 2003, Vol.42 (9A), p.5480-5484
Main Authors: Gamal, G A, Zied, M A, Gerges, M K, Galal, E M
Format: Article
Language:English
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Summary:Single crystals of the Tl2S compound were grown by a new crystal growth technique based on a modification of the traveling heater method technique. This growth was performed. Electrical conductivity, Hall effect and thermoelectric power measurements were carried out in the temperature range (200-575 K). Throughout these measurements, various physical parameters such as effective mass of charge carriers, carrier mobility, diffusion length, diffusion coefficient, and the relaxation time for both majority and minority carriers were found. In conjunction with electrical conductivity and charge carrier concentration, thermoelectric power is discussed. 21 refs.
ISSN:0021-4922
DOI:10.1143/jjap.42.5480